Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ahmed Shariful Alam"'
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 6, Pp 1-7 (2023)
The Electro-optic (EO) modulator is one of the most important devices for optical communication. Lithium niobate on insulator (LNOI) platform has matured over the last few years and has resulted in some excellent EO modulators with very low voltages,
Externí odkaz:
https://doaj.org/article/456ce5b9732243eeadc96dbafcb28df9
Autor:
Yasar Kutuvantavida, Thomas Zwick, Juned N. Kemal, Lothar Hahn, Sebastian Randel, Matthias Lauermann, Ahmed Shariful Alam, Delwin L. Elder, Sree Harsha Nandam, Wolfgang Freude, Artem Kuzmin, S. Ummethala, Christian Koos, Larry R. Dalton
Publikováno v:
Optica
Optica, 8 (4), 511-519
KITopen
UnpayWall
ORCID
Microsoft Academic Graph
Datacite
Optica, 8 (4), 511-519
KITopen
UnpayWall
ORCID
Microsoft Academic Graph
Datacite
Electro-optic (EO) modulators rely on the interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced using dielectric slot–waveguide structures that exploit a f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f720a586cdb94674f41e28102e4d4888
Autor:
Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam
According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d6d29ea4ca91b68d5c1b6b0b9c81a88
Autor:
Atiqul Islam, Abu Hena Md. Mustafa Kamal, Md. Nasmus Sakib Khan Shabbir, Md. Abdur Rahman, Ahmed Shariful Alam
Publikováno v:
2015 International Conference on Electrical Engineering and Information Communication Technology (ICEEICT).
Instead of MOSFET Single Electron Transistor (SET) can be used as a voltage controlled switch. The current flowing through a SET is the result of electron tunneling through tunnel junctions of its source and drain. So the supply voltage requirement i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6dd6f08013604e1f0cd953913a6575c
https://doi.org/10.1109/iceeict.2015.7307337
https://doi.org/10.1109/iceeict.2015.7307337
Publikováno v:
8th International Conference on Electrical and Computer Engineering.
Single Electron Transistor (SET) is an ultra small device which can be used as a possible replacement of a MOSFET. Like CMOS technology, CSET (Complementary SET) models can be used to build same digital circuits. Apart from the drawbacks (which have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11ebd65ce7176e9084c944032259cd2
https://doi.org/10.1109/icece.2014.7026841
https://doi.org/10.1109/icece.2014.7026841