Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Ahmed Rhallabi"'
Publikováno v:
eScience, Vol 2, Iss 2, Pp 235-241 (2022)
A simple, efficient simulator has been developed to predict the generation of photovoltaic energy and its storage in Li-ion batteries, for an autonomous drone with four wings covered by solar panels based on thin-film gallium arsenide photovoltaic ce
Externí odkaz:
https://doaj.org/article/4f28a32730cf43fbbb9af2cbdb2f816b
Publikováno v:
MRS Advances
MRS Advances, Cambridge University Press, 2019, 4 (27), pp.1579-1587. ⟨10.1557/adv.2019.84⟩
MRS Advances, Cambridge University Press, 2019, 4 (27), pp.1579-1587. ⟨10.1557/adv.2019.84⟩
AlN etching with chloride plasmas is studied. The experimental results show that the etching of AlN under a low pressure Cl2/Ar plasma mixture in moderate DC bias is not possible. The addition of BCl3 gas to Cl2/Ar mixture allows the etching of AlN m
Autor:
Emeline Baudet, Christophe Cardinaud, Guillaume Le Dain, Virginie Nazabal, Thibaut Meyer, Ahmed Rhallabi, Aurélie Girard, Petr Němec
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2021, 549, pp.149192. ⟨10.1016/j.apsusc.2021.149192⟩
Applied Surface Science, 2021, 549, pp.149192. ⟨10.1016/j.apsusc.2021.149192⟩
Applied Surface Science, Elsevier, 2021, 549, pp.149192. ⟨10.1016/j.apsusc.2021.149192⟩
Applied Surface Science, 2021, 549, pp.149192. ⟨10.1016/j.apsusc.2021.149192⟩
International audience; A functional waveguide for photonic applications must fulfil some specific requirements in terms of dimension, shape, etch rate and roughness. In this study, Ge-Sb-Se thin films were etched using an Inductively Coupled Plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::473dd7e1b85cd4be5243340f0cd54604
https://hal.archives-ouvertes.fr/hal-03194243/file/ASS_Meyer_2021-1.pdf
https://hal.archives-ouvertes.fr/hal-03194243/file/ASS_Meyer_2021-1.pdf
Autor:
Ahmed Rhallabi, Stéphane Guilet, Feriel Laourine, Aurélie Girard, Guillaume Le Dain, Thierry Czerwiec, Gérard Henrion, Cédric Noël, Christophe Cardinaud, G. Marcos
Publikováno v:
Plasma Sources Science and Technology
Plasma Sources Science and Technology, IOP Publishing, 2021, 30 (9), pp.095022. ⟨10.1088/1361-6595/ac1714⟩
Plasma Sources Science and Technology, IOP Publishing, 2021, 30 (9), pp.095022. ⟨10.1088/1361-6595/ac1714⟩
Dry etching process of iron, chromium and iron-chromium alloys under a chlorine-based plasma is studied. The objective is to create new surface functionalities. Our approach is twofold: on the one hand, an experimental study in an ICP (Inductively Co
A high-power impulse magnetron sputtering global model for argon plasma–chromium target interactions
Publikováno v:
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2021, 39 (4), pp.043004. ⟨10.1116/6.0000865⟩
Journal of Vacuum Science and Technology A, American Vacuum Society, 2021, 39 (4), pp.043004. ⟨10.1116/6.0000865⟩
International audience; A high power impulse magnetron sputtering (HiPIMS) discharge process is analyzed numerically and experimentally so that one may better understand and explain the effect of the pressure and pulse width on HiPIMS discharges and
Publikováno v:
Journal of Molecular Modeling
Journal of Molecular Modeling, Springer Verlag (Germany), 2019, 25 (8), ⟨10.1007/s00894-019-4114-4⟩
Journal of Molecular Modeling, Springer Verlag (Germany), 2019, 25 (8), ⟨10.1007/s00894-019-4114-4⟩
Among the family of lanthanide halides compounds, this work is devoted to the third halogen bromine. The presented lanthanum bromide LaBr molecule has a remarkable scientific interest regarding the other molecules because it presents few experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a737291b2fbf1799d685b8401b64f62
https://hal.archives-ouvertes.fr/hal-02272703
https://hal.archives-ouvertes.fr/hal-02272703
Autor:
Aurélie Girard, Guillaume Le Dain, Mohamed Boufnichel, Ahmed Rhallabi, Christophe Cardinaud, F. Roqueta
Publikováno v:
Plasma Sources Science and Technology
Plasma Sources Science and Technology, IOP Publishing, 2019, 28 (8), pp.085002. ⟨10.1088/1361-6595/ab27d0⟩
Plasma Sources Science and Technology, IOP Publishing, 2019, 28 (8), pp.085002. ⟨10.1088/1361-6595/ab27d0⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c8200125357a119c55e9b84e1972b04
https://hal.archives-ouvertes.fr/hal-02272716
https://hal.archives-ouvertes.fr/hal-02272716
Publikováno v:
Plasma Processes and Polymers. 13:633-648
A Monte Carlo poration model is developed to simulate formation pores of few nanometer of width through cell multilayer membranes when impacted by air plasma species. Each species is assumed as a super-particle involving a large particle number. It i
Autor:
Ahmed Rhallabi, Petr Němec, Christophe Cardinaud, T Meyer, G Ledain, Aurélie Girard, Virginie Nazabal, Marek Bouška
Publikováno v:
Plasma Sources Science and Technology
Plasma Sources Science and Technology, IOP Publishing, 2020, 29 (10), pp.105006. ⟨10.1088/1361-6595/abb0d0⟩
Plasma Sources Science and Technology, 2020, 29 (10), pp.105006. ⟨10.1088/1361-6595/abb0d0⟩
Plasma Sources Science and Technology, IOP Publishing, 2020, 29 (10), pp.105006. ⟨10.1088/1361-6595/abb0d0⟩
Plasma Sources Science and Technology, 2020, 29 (10), pp.105006. ⟨10.1088/1361-6595/abb0d0⟩
Excited species, reactive neutral species and positive ions, produced during the etching of Ge, Se and GeSe2 targets in inductively coupled plasmas, were identified by means of mass spectrometry (MS) and optical emission spectroscopy. The surface of
Autor:
Aurélie Girard, Christophe Cardinaud, Mohamed Boufnichel, F. Roqueta, Ahmed Rhallabi, Guillaume Le Dain, Marie-Claude Fernandez
Publikováno v:
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2018, 36 (3), ⟨10.1116/1.5023590⟩
Journal of Vacuum Science and Technology A, American Vacuum Society, 2018, 36 (3), ⟨10.1116/1.5023590⟩
The authors developed a tool using a multiscale approach to simulate the silicon etching using Bosch process. Their study is focused on the analysis of the effect of the oxygen addition to C4F8 plasma during the deposition pulse. This is the compleme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fe1ff2b57296a78bbe131c2a500a6eb
https://hal.archives-ouvertes.fr/hal-01848351
https://hal.archives-ouvertes.fr/hal-01848351