Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ahmed Iskanderani"'
Autor:
Md. Sakib Hasan Khan, Muhammad Shaffatul Islam, Md. Rafiqul Islam, Ahmed Iskanderani, Ibrahim M. Mehedi, Md. Tanvir Hasan
Publikováno v:
IEEE Access, Vol 9, Pp 109510-109521 (2021)
Novel two-dimensional (2D) PtO2/GaN van der Waals (vdW) hetero-bilayers (HBL) are studied here for photocatalytic water splitting (PWS) application under first-principles density functional theory (DFT). We proposed six HBLs due to the atomic orienta
Externí odkaz:
https://doaj.org/article/cad0e778a9c54735acf1dd4adb825d58
Autor:
Muhammad Shaffatul Islam, Md. Soyaeb Hasan, Md. Rafiqul Islam, Ahmed Iskanderani, Ibrahim M. Mehedi, Md. Tanvir Hasan
Publikováno v:
IEEE Access, Vol 9, Pp 117649-117659 (2021)
In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for high-performance switching applications. The quantum transmitting boundar
Externí odkaz:
https://doaj.org/article/aeea17b95e5846a6ad3cf174199462ba