Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ahmed Hamed Fatehy"'
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIV
In this paper, we are proposing different techniques to enhance the printability of 2D shapes at 3nm node of Block/Cut shapes in self-Aligned Multi-patterning approaches. Multiple directions such as OPC optimization, fragmentation optimization, taggi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5076298cb4f8e9b81538f5834ee05980
https://doi.org/10.1117/12.2552091
https://doi.org/10.1117/12.2552091
Autor:
Ryan Ryoung Han Kim, James Word, Werner Gillijns, Jae Uk Lee, Ahmed Hamed-Fatehy, Rehab Kotb, Rajiv Naresh Sejpal, Youssef Drissi, Germain Fenger
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIII
In this work we are introducing a manufacturing flow for the SALELE Process in details. Starting with layout decomposition, where the drawn layer is decomposed into 4 Masks: 2 Metal-like Masks, and 2 Block-like Masks. Then each of these masks is subj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0828d69812289fb20d130c39c7dafed
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XII.
Printing cut mask in SAMP (Self Aligned Multi Patterning) is very challenging at advanced nodes. One of the proposed solutions is to print the cut shapes selectively. Which means the design is decomposed into mandrel tracks, Mandrel cuts and non-Mand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f74c1c2fd498807257377f713ca3ec09
https://doi.org/10.1117/12.2297415
https://doi.org/10.1117/12.2297415
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
For years, Moore’s law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source’s wave length and the smallest resolvable dimension, mandated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5496f8249a6ffcc775f0ffbe6d08a3c
https://doi.org/10.1117/12.2297408
https://doi.org/10.1117/12.2297408
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XII.
Self-Aligned-Multi-Pattering (SAMP) played an important role in extending Moore’s law over the past years especially in advanced technology nodes beyond 20nm. SAMP was tackled using several approaches, the main and most commonly used approaches are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f9565e447cfe441e7af89c3580fbb5e
https://doi.org/10.1117/12.2297417
https://doi.org/10.1117/12.2297417
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
The 5nm technology node introduces more aggressive geometries than previous nodes. In this paper, we are introducing a comprehensive study to examine the pattering limits of EUV at 0.33NA. The study is divided into two main approaches: (A) Exploring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fdcdef4793ac3870811795e1455e01b
https://doi.org/10.1117/12.2297412
https://doi.org/10.1117/12.2297412
Publikováno v:
ACTEA
Embedded systems are ubiquitous; imposing a challenge in time to market. Another main challenge during embedded systems development cycle is partitioning the embedded function into SW and HW modules to meet the stringent area, delay and power constra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d7c8975c5015d8245eb9394bcf140f5
https://doi.org/10.1109/actea.2016.7560103
https://doi.org/10.1109/actea.2016.7560103
Publikováno v:
SPIE Proceedings.
Self-Aligned-Double-Patterning (SADP) is a potential technology for metal layers in N10 and beyond nodes. SADP manufacturing process comes with lots of challenges. Several approaches were introduced to manufacture SADP. The most major SADP manufactur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb58f29dc533724aaa1e3f0900dc7980
https://doi.org/10.1117/12.2218828
https://doi.org/10.1117/12.2218828