Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Ahmed, Sheikh Z."'
Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective mass and large separation between light-hole and split-off bands in th
Externí odkaz:
http://arxiv.org/abs/2111.04247
A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superl
Externí odkaz:
http://arxiv.org/abs/2109.01995
Autor:
Zheng, Jiyuan, Jones, Andrew H., Tan, Yaohua, Rockwell, Ann K., March, Stephen, Ahmed, Sheikh Z., Dukes, Catherine A., Ghosh, Avik W., Bank, Seth R., Campbell, Joe C.
Publikováno v:
Applied Physics Letters 115.12 (2019): 122105
The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in
Externí odkaz:
http://arxiv.org/abs/2105.13187
Autor:
Zheng, Jiyuan, Ahmed, Sheikh Z., Yuan, Yuan, Jones, Andrew, Tan, Yaohua, Rockwell, Ann K., March, Stephen D., Bank, Seth R., Ghosh, Avik W., Campbell, Joe C.
Publikováno v:
InfoMat 2.6 (2020): 1236-1240
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tigh
Externí odkaz:
http://arxiv.org/abs/2105.13176
Autor:
Ahmed, Sheikh Z., Ganguly, Samiran, Yuan, Yuan, Zheng, Jiyuan, Tan, Yaohua, Campbell, Joe C., Ghosh, Avik W.
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a
Externí odkaz:
http://arxiv.org/abs/2102.04647
We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well kno
Externí odkaz:
http://arxiv.org/abs/1806.06331
Publikováno v:
In Solid State Electronics July 2020 169
Autor:
Witzigmann, Bernd, Osiński, Marek, Arakawa, Yasuhiko, Guo, Bingtian, Liang, Baolai, Ahmed, Sheikh Z., Krishna, Sanjay, Campbell, Joe C.
Publikováno v:
Proceedings of SPIE; March 2024, Vol. 12880 Issue: 1 p128800C-128800C-4, 1159205p
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.