A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology.

Autor: Sokolich, M., Docter, D.P., Brown, Y.K., Kramer, A.R., Jensen, J.F., Stanchina, W.E., Thomas, S., Fields, C.H., Ahmari, D.A., Lui, M., Martinez, R., Duvall, J.

Publikováno v: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 20th Annual Technical Digest 1998 (Cat No98CH36260); 1998, p117-120, 4p

Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT.

Autor: Barlage, D.W., Heins, M.S., Mu, J.H., Fresina, M.T., Ahmari, D.A., Hartman, Q.J., Stillman, G.E., Feng, M.

Publikováno v: Compound Semiconductors 1997 Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors; 1998, p511-514, 4p

Optimization of group V switching times for InGaP/GaAs heterostructures grown by LP-MOCVD.

Autor: Yang, Q., Hartmann, Q.J., Curtis, A.P., Lin, C., Ahmari, D.A., Scott, D., Kuo, H.C., Chen, H., Stillman, G.E.

Publikováno v: Compound Semiconductors 1997 Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors; 1998, p95-98, 4p

Carbon-doped HBTs for OEICs.

Autor: Stillman, G.E., Feng, M., Fresina, M.A., Hartmann, Q.J., Ahmari, D.A., Mares, P.J., Thomas, S., Stockman, S.A., Jackson, S.L.

Publikováno v: Proceedings of 4th International Conference on Solid-State & IC Technology; 1995, p379-383, 5p

Silicon doping of InP, GaAs, In/sub 0.53/Ga/sub 0.47/As and In/sub 0.49/Ga/sub 0.51/P grown by gas source and metalorganic molecular beam epitaxy using a SiBr/sub 4/ vapor source.

Autor: Jackson, S.L., Thomas, S., Fresina, M.T., Ahmari, D.A., Baker, J.E., Stillman, G.E.

Publikováno v: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide & Related Materials (IPRM); 1994, p57-60, 4p