La$_2$NiO$_{4+\delta}$ ‐based memristive devices integrated on Si‐based substrates

Autor: Thoai‐Khanh Khuu, Gauthier Lefèvre, Carmen Jiménez, Hervé Roussel, Adeel Riaz, Serge Blonkowski, Eric Jalaguier, Ahmad Bsiesy, Mónica Burriel

Publikováno v: Advanced Materials Technologies
Advanced Materials Technologies, 2022, 2022, pp.2200329. ⟨10.1002/admt.202200329⟩

The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/admt.202200329.; International audience; Valence change memories, in which internal redox reactions control the change in resistance are p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f0a46da2d70f4144a4ba1878cb3c05c
https://hal.science/hal-03764455

Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO 2

Autor: M. Bonvalot, Taguhi Yeghoyan, Christophe Vallée, Ahmad Chaker, Moustapha Jaffal, Ahmad Bsiesy, Samia Belahcen

Publikováno v: Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2021, 39 (1), pp.012410. ⟨10.1116/6.0000655⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2021, 39 (1), pp.012410. ⟨10.1116/6.0000655⟩

Deposition of titanium nitride thin films by plasma enhanced atomic layer deposition has been realized on thermal silicon oxide substrates in an inductively coupled plasma reactor. The plasma step involves a H2 (40 sccm)/N2 (5 sccm)/Ar (10 sccm) gas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b4979d4818b721a0194cde869d207ce
https://hal.univ-grenoble-alpes.fr/hal-03449120

Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms

Autor: Christophe Vallée, Patrice Gonon, M. Saadi, Ahmad Bsiesy, Fathi Jomni, E. Jalaguier

Publikováno v: Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics, Springer Verlag, 2020, 31 (16), pp.13487-13495. ⟨10.1007/s10854-020-03903-9⟩
Journal of Materials Science: Materials in Electronics, 2020, 31 (16), pp.13487-13495. ⟨10.1007/s10854-020-03903-9⟩

Resistance switching is studied in conductive bridge memory structures made from atomic layer deposited HfO2 and Ag active electrode. Inert electrode is varied by using different substrates (TiN, W, Pt). HfO2 crystallinity is modified by varying the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa1f13a4389edf4a9d2e9b247f8b2062
https://hal.univ-grenoble-alpes.fr/hal-02916808

Adaptation of the higher education in engineering to the advanced manufacturing technologies

Autor: Olivier Bonnaud, Ahmad Bsiesy

Publikováno v: Advances in Technology Innovation
Advances in Technology Innovation, 2020, 5 (2), pp.65-75
Advances in Technology Innovation, Vol 5, Iss 2 (2020)

International audience; The 21st century will be the era of the fourth industrial revolution with the progressive introduction of the digital society, with smart/connected objects, smart factories that are driven by robotics, the Internet of Things (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e39e4bd117bc50888a2ed30c650031bd
https://hal.archives-ouvertes.fr/hal-02891809

Topographically selective deposition

Autor: Rémi Vallat, Nicolas Posseme, Ahmad Bsiesy, V. Pesce, M. Bonvalot, Samia Belahcen, R. Gassilloud, Ahmad Chaker, Christophe Vallée

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2019, 114 (4), pp.043101
Applied Physics Letters, 2019, 114 (4), pp.043101

In this paper, we present a topographically Selective Deposition process which allows the vertical only coating of three-dimensional (3D) nano-structures. This process is based on the alternate use of plasma enhanced atomic layer deposition (PEALD) a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f5e3480f9e2410fc2beea9a3a296dc6
https://hal.univ-grenoble-alpes.fr/hal-01997456