Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

Autor: Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Raphael Sommet, Raymond Quere

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 5, Iss 3, Pp 175-181 (2017)

In this paper, the type, activation energy (Ea) and cross section (σn) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measurements. Furthermore, we presen

Externí odkaz: https://doaj.org/article/c80584ab11bd4dc78de9588d7b25705a

A 10 W, 35 % Power Added Efficiency 6 to 18 GHz GaN Power Amplifier

Autor: Julien Poulain, F. Lecourt, Ahmed Gasmi, Ahmad Al Hajjar, Adrien Cutivet, Remy Leblanc, Bertrand Wroblewski

Publikováno v: 2020 50th European Microwave Conference (EuMC).

This paper presents the design and test results of a 6 to 18 GHz power amplifier MMIC fabricated with a Gallium Nitride process, using a reactively matched non-distributed architecture. This circuit exhibits a gain of 20 dB, input and output return l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d809d738047a4ebc0c981a1a996b4415
https://doi.org/10.23919/eumc48046.2021.9338162

Intelligent Models to Predict the Prognosis of Premature Neonates According to Their EEG Signals

Autor: Yasser Al Hajjar, Abd El Salam Ahmad Al Hajjar, Bassam Daya, Pierre Chauvet

The aim of this paper is to find the best intelligent model that allows predicting the future of premature newborns according to their electroencephalogram (EEG). EEG is a signal that measures the electrical activity of the brain. In this paper, the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d4b34dbe98d2856d2406f2829bdbc926
https://doi.org/10.4018/978-1-7998-2460-2.ch043

Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate

Autor: Ahmad Al Hajjar, Jean-Christophe Nallatamby, Mohamed Bouslama, Farid Medjdoub, Raphaël Sommet

Publikováno v: 13th European Microwave Integrated Circuits Conference (EuMIC 2018)
13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩

International audience; This paper reports the full characterization and modeling of novel AlN/GaN HEMTs on silicon using a short gate length. This device has been optimized for high frequency analog circuits applications. The presented model include

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b1d4dfed42245998680c9fb4ffb8344
https://hal.archives-ouvertes.fr/hal-02356757/document

Low Frequency Drain Noise Characterization of Different Technologies of GaN HEMTs:Investigation of Trapping Mechanism

Autor: Ahmad Al Hajjar, Sylvain Laurent, Nandha Kumar Subramani, Mohamed Bouslama, Jean-Christophe Nallatamby, Michel Prigent

Publikováno v: 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC)
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC), Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430029⟩
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, Jul 2018, brive, France

In this paper, we attempt to characterize the low-frequency (LF) drain noise characteristics of 0.25- μ m ultra-short gate length GaN HEMT devices fabricated using different transistor technology. LF drain noise characteristics have been measured us

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::161f74b4e22ac456e79b8934a825bbef
https://hal.archives-ouvertes.fr/hal-02457166