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pro vyhledávání: '"Agustín Ferreres"'
Autor:
Enrique Maset, Juan Bta. Ejea, Agustín Ferreres, José Luis Lizán, Jose Manuel Blanes, Esteban Sanchis-Kilders, Ausias Garrigós
Publikováno v:
Energies, Vol 13, Iss 24, p 6583 (2020)
This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bu
Externí odkaz:
https://doaj.org/article/098b23e39f9743feaf47de6825cce9cf
