Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Agostino Pirovano"'
Autor:
Seung-Jun Bae, Roberto Bez, Paolo Cappelletti, Paolo Fantini, Akira Goda, Laurent Grenouillet, Mark Helm, Gertjan Hemink, Daniele Ielmini, Dae-Hyun Kim, Hye-Jung Kwon, Gabriel Molas, Ravi Nair, Giacomo Pedretti, Fabio Pellizzer, Agostino Pirovano, Andrea Redaelli, Julien Ryckaert, Shairfe Muhammad Salahuddin, Jon Slaughter, Pieter Weckx, Jung Yoon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c26e7737255f61426bc3e4594ecb688
https://doi.org/10.1016/b978-0-12-820758-1.09988-x
https://doi.org/10.1016/b978-0-12-820758-1.09988-x
Autor:
Agostino Pirovano
Publikováno v:
Phase Change Memory ISBN: 9783319690520
The phase-change memory (PCM), also called ovonic unified memory (OUM) or phase-change RAM (PCRAM), is an emerging nonvolatile semiconductor technology based on thermally induced phase transitions of a thin-film chalcogenide material. PCM relies on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fb5d4e673525261264280dc8b25118f
https://doi.org/10.1007/978-3-319-69053-7_1
https://doi.org/10.1007/978-3-319-69053-7_1
Autor:
Agostino Pirovano
Publikováno v:
In Search of the Next Memory ISBN: 9783319477220
Although flash technology has clearly demonstrated its capability to shrink the cell size according to Moore’s law, further reduction of the dimension is facing fundamental physical limits, and it is demanding technological developments that are ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8ebe8df732d5c64c147d07a158fa3d
https://doi.org/10.1007/978-3-319-47724-4_3
https://doi.org/10.1007/978-3-319-47724-4_3
Autor:
Agostino Pirovano
Publikováno v:
Wiley Encyclopedia of Electrical and Electronics Engineering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::279a25fd5cbc9f2e92c5f8b9794019b9
https://doi.org/10.1002/047134608x.w8325
https://doi.org/10.1002/047134608x.w8325
Publikováno v:
Materials Science Forum. 608:111-132
The development of the semiconductor industry through the CMOS technology has been possible thanks to the unique properties of the silicon and silicon dioxide material. Nevertheless the continuous scaling of the device dimension and the increase of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5e9e039396a081a6fe4b461aa7c313b
https://doi.org/10.4028/www.scientific.net/msf.608.111
https://doi.org/10.4028/www.scientific.net/msf.608.111
Autor:
Agostino Pirovano, R. Harrigan, Ferdinando Bedeschi, I. Tortorelli, R. Fackenthal, Andrea Redaelli, T. Marangon, Pietro Petruzza, G. Atwood, Davide Erbetta, Roberto Bez, A. Rigano, Fabio Pellizzer, M. Magistretti, Enrico Varesi
Publikováno v:
Solid-State Electronics. 52:1467-1472
A novel self-aligned μTrench-based cell architecture for phase change memory (PCM) process is presented. The low programming current and the good dimensional control of the sub-lithographic features achieved with the μTrench structure are combined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2139217bb142a5d9c110a2fefadbef97
https://doi.org/10.1016/j.sse.2008.04.031
https://doi.org/10.1016/j.sse.2008.04.031
Publikováno v:
Solid-state electronics 49 (2005): 1826–1832.
info:cnr-pdr/source/autori:D. Ielmini, D. Mantegazza, A.L. Lacaita, A. Pirovano, F. Pellizzer/titolo:Switching and programming dynamics in phase-change memory cells/doi:/rivista:Solid-state electronics/anno:2005/pagina_da:1826/pagina_a:1832/intervallo_pagine:1826–1832/volume:49
info:cnr-pdr/source/autori:D. Ielmini, D. Mantegazza, A.L. Lacaita, A. Pirovano, F. Pellizzer/titolo:Switching and programming dynamics in phase-change memory cells/doi:/rivista:Solid-state electronics/anno:2005/pagina_da:1826/pagina_a:1832/intervallo_pagine:1826–1832/volume:49
Emerging phase-change memory (PCM) technology for non-volatile applications presents many potential advantages in terms of scalability, endurance and program/read speed. While several integration issues have still to be solved before achieving volume
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f95bf9a4bcf6842ff1debc7f27c8b63c
https://doi.org/10.1016/j.sse.2005.10.013
https://doi.org/10.1016/j.sse.2005.10.013
Publikováno v:
Solid-State Electronics. 49:1820-1825
Organic electrically bistable materials exhibiting conductance switching have been investigated and their potential exploitation in non-volatile memory applications has been tested. Theoretical modelling of both geometrical and electronic structure o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee01acfbcf9dbeee1e15d95b74c9a323
https://doi.org/10.1016/j.sse.2005.10.010
https://doi.org/10.1016/j.sse.2005.10.010
Autor:
Roberto Bez, F. Ottogalli, E. Buda, Osama Khouri, Giulio Casagrande, Ferdinando Bedeschi, L. Costa, Claudio Resta, M. Ferraro, Fabio Pellizzer, Edoardo Bonizzoni, Marina Tosi, C. Boffino, Agostino Pirovano, Roberto Gastaldi, Guido Torelli
Publikováno v:
IEEE Journal of Solid-State Circuits. 40:1557-1565
A /spl mu/trench Phase-Change Memory (PCM) cell with MOSFET selector and its integration in a 4-Mb experimental chip fabricated in 0.18-/spl mu/m CMOS technology are presented. A cascode bitline biasing scheme allows read and write voltages to be fed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2d20d8c864688433debeadad10327a7
https://doi.org/10.1109/jssc.2005.847531
https://doi.org/10.1109/jssc.2005.847531
Autor:
Alessandro S. Spinelli, Frederic Boeuf, Agostino Pirovano, Thomas Skotnicki, A.L. Lacaita, R. Gusmeroli
Publikováno v:
I.E.E.E. transactions on electron devices 51 (2004): 1849–1855.
info:cnr-pdr/source/autori:R. Gusmeroli, A. S. Spinelli, A. Pirovano, A. L. Lacaita, F. Boeuf and T. Skotnicki/titolo:Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations/doi:/rivista:I.E.E.E. transactions on electron devices/anno:2004/pagina_da:1849/pagina_a:1855/intervallo_pagine:1849–1855/volume:51
info:cnr-pdr/source/autori:R. Gusmeroli, A. S. Spinelli, A. Pirovano, A. L. Lacaita, F. Boeuf and T. Skotnicki/titolo:Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations/doi:/rivista:I.E.E.E. transactions on electron devices/anno:2004/pagina_da:1849/pagina_a:1855/intervallo_pagine:1849–1855/volume:51
Two-dimensional quantum-mechanical simulations of nonoverlapped MOS devices are presented, and validated through comparison against experimental data. Simulations are used to highlight the electrical characteristics of these devices, explore their de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::991d54d7b7a6d1d78c80f15c74002c4a
https://doi.org/10.1109/ted.2004.837124
https://doi.org/10.1109/ted.2004.837124