Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Agnes Gubicza"'
Autor:
Botond Sánta, Dániel Molnár, Patrick Haiber, Agnes Gubicza, Edit Szilágyi, Zsolt Zolnai, András Halbritter, Miklós Csontos
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 92-100 (2020)
Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high op
Externí odkaz:
https://doaj.org/article/0c34efc4831b4a308e698a06dc25726a
Publikováno v:
Journal of Materials Chemistry C. 9:11198-11206
We investigated the effects of relative humidity (RH) in the ambient atmosphere on the resistive switching behavior of a polyethylene oxide (PEO)-based atomic switch. Current–voltage, cyclic voltammetry, and electrochemical impedance measurements w
Autor:
Jakob Heier, Agnes Gubicza, Frank Nüesch, Karen Strassel, Roland Hany, Erwin Hack, Surendra B. Anantharaman, Matthias Diethelm
Publikováno v:
Journal of Materials Chemistry C. 7:14639-14650
Narrowband photodetectors are useful for a myriad of applications involving color discrimination as well as biological imaging and machine vision. Prevalent devices use broadband light absorbing materials in conjunction with electric (charge collecti
Autor:
Lars Lüder, Agnes Gubicza, Michael Stiefel, Jan Overbeck, Davide Beretta, Amin Sadeghpour, Antonia Neels, Peter N. Nirmalraj, René M. Rossi, Claudio Toncelli, Michel Calame
Publikováno v:
Advanced Electronic Materials. 8:2270010
Autor:
M. Csontos, Dániel Molnár, Botond Sánta, Edit Szilágyi, Zsolt Zolnai, András Halbritter, Agnes Gubicza, Patrick Haiber
Publikováno v:
Beilstein Journal of Nanotechnology, 11
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 92-100 (2020)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 92-100 (2020)
Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c2b6536afa196a32971020c341941b0
https://hdl.handle.net/20.500.11850/581353
https://hdl.handle.net/20.500.11850/581353
Autor:
Lars Lüder, Agnes Gubicza, Michael Stiefel, Jan Overbeck, Davide Beretta, Amin Sadeghpour, Antonia Neels, Peter N. Nirmalraj, René M. Rossi, Claudio Toncelli, Michel Calame
Publikováno v:
Advanced Electronic Materials. 8:2100871
Autor:
Masoud Baghernejad, John D. Tovar, Justin P. Bergfield, Wenjing Hong, Colin Van Dyck, Michel Calame, David R. Levine, Peter Broekmann, Agnes Gubicza
Publikováno v:
Chemistry (Weinheim an der Bergstrasse, Germany). 25(66)
Providing a chemical control over charge transport through molecular junctions is vital to developing sensing applications at the single-molecule scale. Quantum-interference effects that affect the charge transport through molecules offer a unique ch
Autor:
M. Csontos, György Mihály, Botond Sánta, Dávid Krisztián, Agnes Gubicza, Zoltán Balogh, László Pósa, András Halbritter
Publikováno v:
Nanoscale. 11(11)
The microscopic origins and technological impact of 1/f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. The analysis of the low-frequ
Autor:
Dániel, Molnár, Tímea Nóra, Török, Botond, Sánta, Agnes, Gubicza, András, Magyarkuti, Roland, Hauert, Gábor, Kiss, András, Halbritter, Miklós, Csontos
Publikováno v:
Nanoscale. 10(41)
The dynamical aspects of bipolar resistive switchings have been investigated in Nb/Nb
Autor:
Botond Sánta, Tímea Nóra Török, Roland Hauert, M. Csontos, Dániel Molnár, Agnes Gubicza, András Magyarkuti, Gabor Kiss, András Halbritter
Publikováno v:
Nanoscale, 10 (41)
The dynamical aspects of bipolar resistive switchings have been investigated in Nb/Nb2O5/PtIr nanojunctions. We found that the widely tuneable ON and OFF state resistances are well separated at low bias. On the other hand, the high-bias regime of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::127eecd8b796a1e17d7f93bb09dc9ac1