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Direct atomic layer deposition of ultra-thin $Al_{2}O_{3}$ and $HfO_{2}$ films on gold-supported monolayer $MoS_{2}$

Autor: Schilirò, E., Panasci, S. E., Mio, A. M., Nicotra, G., Agnello, S., Pecz, B., Radnoczi, G. Z., Deretzis, I., La Magna, A., Roccaforte, F., Nigro, R. Lo, Giannazzo, F.

In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD pro

Externí odkaz: http://arxiv.org/abs/2305.07933

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Atomic resolution interface structure and vertical current injection in highly uniform $MoS_{2}$ heterojunctions with bulk GaN

Autor: Giannazzo, F., Panasci, S. E., Schilirò, E., Greco, G., Roccaforte, F., Sfuncia, G., Nicotra, G., Cannas, M., Agnello, S., Frayssinet, E., Cordier, Y., Michon, A., Koos, A., Pécz, B.

The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sap

Externí odkaz: http://arxiv.org/abs/2304.12213

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Substrate impact on the thickness dependence of vibrational and optical properties of large area $MoS_2$ produced by gold-assisted exfoliation

Autor: Panasci, S. E., Schilirò, E., Migliore, F., Cannas, M., Gelardi, F. M., Roccaforte, F., Giannazzo, F., Agnello, S.

Publikováno v: Appl. Phys. Lett. 119, 093103 (2021)

The gold-assisted exfoliation is a very effective method to produce large-area ($cm^2$-scale) membranes of molybdenum disulfide ($MoS_2$) for electronics. However, the strong $MoS_2/Au$ interaction, beneficial for the exfoliation process, has a stron

Externí odkaz: http://arxiv.org/abs/2108.09544

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Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate

Autor: Panasci, S. E., Schilirò, E., Greco, G., Cannas, M., Gelardi, F. M., Agnello, S., Roccaforte, F., Giannazzo, F.

Publikováno v: ACS Appl. Mater. Interfaces 2021

Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vd

Externí odkaz: http://arxiv.org/abs/2104.13278

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Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Autor: Giannazzo, F., Dagher, R., Schilirò, E., Panasci, S. E., Greco, G., Nicotra, G., Roccaforte, F., Agnello, S., Brault, J., Cordier, Y., Michon, A.

Publikováno v: Nanotechnology 32 (2020) 015705

The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates

Externí odkaz: http://arxiv.org/abs/2009.08673

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Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Autor: Schilirò, E., Nigro, R. Lo, Panasci, S. E., Gelardi, F. M., Agnello, S., Yakimova, R., Roccaforte, F., Giannazzo, F.

Publikováno v: Carbon 169 (2020) 172-181

In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H-SiC) has been investigated by atomic force microsc

Externí odkaz: http://arxiv.org/abs/2007.14427

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