Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Agne Johannessen"'
Autor:
Bruno Comis Bersch, Tomàs Caminal Ros, Vegard Tollefsen, Erik Andrew Johannessen, Agne Johannessen
Publikováno v:
Materials, Vol 16, Iss 6, p 2319 (2023)
AlN is a piezoelectric material used in telecommunication applications due to its high surface acoustic wave (SAW) velocity, stability, and mechanical strength. Its performance is linked to film quality, and one method to achieve high-quality films g
Externí odkaz:
https://doaj.org/article/f8262908b67b40d8977bf5f151e206b7
Autor:
Trinh Bich Hoang, Bjørn Torger Stokke, Ulrik Hanke, Agne Johannessen, Erik Andrew Johannessen
Publikováno v:
Applied Sciences, Vol 9, Iss 2, p 318 (2019)
The competition between various carbohydrates in the binding to Concanavalin A (Con A) can be exploited in gravimetric microsensors that detect changes in mass or viscoelasticity as a function of glucose concentration. Such sensors are based on the i
Externí odkaz:
https://doaj.org/article/9db0954f8459414aa25429f51567f4ec
Publikováno v:
IEEE Sensors Journal. 21:4391-4404
The mass and viscoelastic properties associated with the binding of the Concanavalin A (Con A) – dextran ( ${M}_{w} = 80$ kDa) affinity assay as a function of glucose concentration, was investigated using a quartz crystal microbalance (QCM). The Co
Publikováno v:
Ultrasonics. 94:92-101
The dependence of the performance of thin film bulk acoustic resonator (FBAR) and solidly mounted resonator (SMR), on their areas is studied with the aid of finite element method (FEM) software. Dual step frame method is applied for both types of the
Publikováno v:
Applied Sciences
Volume 9
Issue 2
Applied Sciences, Vol 9, Iss 2, p 318 (2019)
Volume 9
Issue 2
Applied Sciences, Vol 9, Iss 2, p 318 (2019)
The competition between various carbohydrates in the binding to Concanavalin A (Con A) can be exploited in gravimetric microsensors that detect changes in mass or viscoelasticity as a function of glucose concentration. Such sensors are based on the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ec199fd29a3750f2df07c425ac2ab8f
https://hdl.handle.net/11250/2618335
https://hdl.handle.net/11250/2618335
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 65(9)
This paper presents a new approach for the design of film bulk acoustic resonators (FBARs) with high-quality factor ${Q}_{a}$ at antiresonant frequency ${f}_{a}$ . Lamb waves are among the main contributors to the loss of energy at ${f}_{a}$ and the
Autor:
E. Johannessen, Steponas Ašmontas, Algirdas Sužiedėlis, Jurgis Kundrotas, Jonas Gradauskas, Aurimas Čerškus, Agne Johannessen
Publikováno v:
Applied Physics A. 120:1133-1140
Vertical MBE- and MOCVD-grown $${n}^{+}/{n}\hbox {-GaAs}/\hbox {Al}_{0.25}\hbox {Ga}_{0.75}\hbox {As}$$ structures used for microwave electronics have been studied with continuous wave and time-correlated single photon counting dynamic photoluminesce
Publikováno v:
2016 IEEE International Frequency Control Symposium (IFCS).
This paper investigates and compares three methods for the analysis of the thin film bulk acoustic resonator (FBAR) in order to study the propagation of plate waves in the device. The finite element method (FEM) is compared to the Transfer Matrix (TM
Autor:
E. Johannessen, Jurgis Kundrotas, Gintaras Valušis, Agne Johannessen, Edmund H. Linfield, Aurimas Čerškus
Publikováno v:
Lithuanian Journal of Physics. 55
The radiative recombination rate of moderately dopedn-type andp-type GaAs/AlAs multiple quantum wells using a timecorrelated single photon counting system is presented. The experimental study has been obtained within a wide temperature range from liq
Autor:
Matthew J. Steer, Jurgis Kundrotas, Matthew P. Halsall, B. Sherliker, Paul Harrison, Aurimas Čerškus, Gintaras Valušis, Agne Johannessen, Steponas Ašmontas
Publikováno v:
Lithuanian Journal of Physics. 45:201-206
We present the photoluminescence properties of highly Be �-doped GaAs/AlAs multiple quantum wells at liquid nitrogen and room temperatures. Possible mechanisms of carrier recombination focusing on peculiarities of excitonic and free-carriers– acc