Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Aging state of IGBT"'
Publikováno v:
Energy Reports, Vol 9, Iss , Pp 1432-1446 (2023)
The insulated gate bipolar transistor (IGBT) is widely used in the power electronic system, but its aging state is difficult to predict in advance due to the complicated failure mechanism, which will affect the performance of the equipment, and even
Externí odkaz:
https://doaj.org/article/a3a9d95122fd45eb92b3f8db9da20125
Akademický článek
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Publikováno v:
IEEE Transactions on Power Electronics; September 2023, Vol. 38 Issue: 9 p11488-11499, 12p
Publikováno v:
IEEE Transactions on Device & Materials Reliability; Dec2017, Vol. 17 Issue 4, p785-794, 10p
Publikováno v:
Electronics (2079-9292); Jun2021, Vol. 10 Issue 12, p1449, 1p
Publikováno v:
IEEE Transactions on Device & Materials Reliability; Dec2021, Vol. 21 Issue 4, p639-646, 8p
Autor:
Li, Lie1 (AUTHOR), He, Yigang1 (AUTHOR) yghe1221@whu.edu.cn, Wang, Lei1 (AUTHOR), Wang, Chenyuan1 (AUTHOR), Wang, Chuankun1 (AUTHOR), Wu, Xiaoxin1 (AUTHOR)
Publikováno v:
Microelectronics Reliability. Jul2021, Vol. 122, pN.PAG-N.PAG. 1p.
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility; Aug2021, Vol. 63 Issue 4, p1274-1283, 10p
Autor:
Wang, Zhengping1 (AUTHOR) luckyzpw@gmail.com, Li, Guoyi1 (AUTHOR) liguoyidianliju@gmail.com, Tseng, Ming-Lang2,3,4 (AUTHOR) tsengminglang@asia.edu.tw, Wong, Wai-Peng5 (AUTHOR) wongwp@usm.my, Liu, Boying6 (AUTHOR) lby@hebut.edu.cn
Publikováno v:
Symmetry (20738994). May2020, Vol. 12 Issue 5, p825. 1p.
Autor:
Hu, Zilang1 (AUTHOR) captain@my.swjtu.edu.cn, Ge, Xinglai1 (AUTHOR) xlgee@163.com, Xie, Dong1 (AUTHOR), Zhang, Yichi1 (AUTHOR), Yao, Bo1 (AUTHOR), Dai, Jian1 (AUTHOR), Yang, Fengbo1 (AUTHOR)
Publikováno v:
Energies (19961073). Oct2019, Vol. 12 Issue 20, p3962-3962. 1p. 6 Diagrams, 13 Charts, 13 Graphs.