Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Agham B, Posadas"'
Autor:
Adam Dodson, Hongrui Wu, Anuruddh Rai, Sohm Apte, Andrew O’Hara, Benjamin Lawrie, Yongqiang Wang, Akira Ueda, Halina Krzyżanowska, Michael Titze, Jimmy Davidson, Anthony Hmelo, Agham B. Posadas, Alexander A. Demkov, Sokrates T. Pantelides, Leonard C. Feldman, Norman H. Tolk
Publikováno v:
Communications Physics, Vol 7, Iss 1, Pp 1-9 (2024)
Abstract Characterization of the atomic level processes that determine optical transitions in emerging materials is critical to the development of new platforms for classical and quantum networking. Such understanding often emerges from studies of th
Externí odkaz:
https://doaj.org/article/ed75df29ff45480a889ab8e6d7efa934
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 10, Pp n/a-n/a (2021)
Strontium barium niobate (Sr x Ba1–x Nb2O6, referred to as SBN) is a material of interest for making efficient optical modulators due to its very high electro‐optic (EO or Pockels) coefficient. SBN is a ferroelectric with a Curie temperature that
Externí odkaz:
https://doaj.org/article/19e4517a5f3f4831b036162c4aa50314
Autor:
Tobias Hadamek, Agham B. Posadas, Fatima Al-Quaiti, David J. Smith, Martha R. McCartney, Alexander A. Demkov
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045209-045209-10 (2021)
β-Ga2O3 was deposited in thin film form by plasma-assisted molecular beam epitaxy at 670 °C and 630 °C onto a γ-Al2O3 (111) buffer layer grown at 840 °C by e-beam evaporation on a clean Si (001) surface. The β-Ga2O3 film was 66 nm thick, stoich
Externí odkaz:
https://doaj.org/article/4d697671512d4137943f18e3fc5714d3
Autor:
Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha, Alexander A. Demkov, Hyunsang Hwang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by
Externí odkaz:
https://doaj.org/article/2d115af51862416889643806af10ea45
Autor:
Marc Reynaud, Zuoming Dong, Hyoju Park, Wente Li, Agham B. Posadas, Jamie H. Warner, Daniel Wasserman, Alexander A. Demkov
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6055afe232da172c0cda77ebb0f8506
https://doi.org/10.1103/physrevmaterials.6.095201
https://doi.org/10.1103/physrevmaterials.6.095201
Autor:
Agham B, Posadas, Hyoju, Park, Marc, Reynaud, Wei, Cao, Jamie D, Reynolds, Wei, Guo, Vadivukkarasi, Jeyaselvan, Ilya, Beskin, Goran Z, Mashanovich, Jamie H, Warner, Alexander A, Demkov
Publikováno v:
ACS applied materialsinterfaces. 13(43)
Thick epitaxial BaTiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ff4de696cfc9987bfe62c88738a67158
https://pubmed.ncbi.nlm.nih.gov/34669388
https://pubmed.ncbi.nlm.nih.gov/34669388
Autor:
Tobias Hadamek, Agham B. Posadas, Fatima Al-Quaiti, David J. Smith, Martha R. McCartney, Eric Dombrowski, Alexander A. Demkov
Publikováno v:
Journal of Applied Physics. 131:145702
Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00d9e7771deb18b3e67b8457dab88ff3
https://doi.org/10.1063/5.0082859
https://doi.org/10.1063/5.0082859
Publikováno v:
Journal of Vacuum Science & Technology A. 40:013416
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22897459b4b172aa128962e51b83d31b
https://doi.org/10.1116/6.0001539
https://doi.org/10.1116/6.0001539
Autor:
J Elliott, Ortmann, Nishant, Nookala, Qian, He, Lingyuan, Gao, Chungwei, Lin, Agham B, Posadas, Albina Y, Borisevich, Mikhail A, Belkin, Alexander A, Demkov
Publikováno v:
ACS nano. 12(8)
The Si-compatibility of perovskite heterostructures offers the intriguing possibility of producing oxide-based quantum well (QW) optoelectronic devices for use in Si photonics. While the SrTiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d189e48714a319e19d3c432b4e5f59f1
https://pubmed.ncbi.nlm.nih.gov/30052026
https://pubmed.ncbi.nlm.nih.gov/30052026
Autor:
Jaehyuk, Park, Tobias, Hadamek, Agham B, Posadas, Euijun, Cha, Alexander A, Demkov, Hyunsang, Hwang
Publikováno v:
Scientific Reports
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0279a22f8e6aa30869090702b3bd41ce
https://pubmed.ncbi.nlm.nih.gov/28642471
https://pubmed.ncbi.nlm.nih.gov/28642471