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pro vyhledávání: '"Agethle, A."'
Autor:
Agethle, M., Vass, E. ∗
Publikováno v:
In Solid State Communications 2003 125(11):591-596
Autor:
M. Agethle, E. Vass
Publikováno v:
Solid State Communications. 125:591-596
The intraband photon absorption coefficient K of hot 2D electrons interacting with polar-optical (PO) half space-, interface-, confined- and bulk-phonon modes in Al x Ga 1− x As/GaAs-Square-Quantum-Wells is calculated perturbation-theoretically and
Autor:
Fleury, P., Dorioz, L., Perron, L., Masson, N., Delattre, F., Dobremez, L., Bosshard, A., Richter, T., Schaub, D., Rennenkampf, K., Müller, P., De Ros, G., Cesaro, S., Notaro, S., Sicher, L., Mattanovich, E., Steininger, K., Buchgraber, U., Bogner, D., Eggensberger, P., Sladek, C., Döbl, F., Lindner, T., Agethle, A.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3669::1f379a88178c4217302d96a3dc23152d
http://hdl.handle.net/10449/17494
http://hdl.handle.net/10449/17494