Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Agchbayar Tuya"'
Autor:
Won-Jae Lee, Hi Deok Lee, Agchbayar Tuya, Han Seob Cha, Hee Hwan Ji, Kil Jin Han, Jang Gn Yun, Do−Woo Kim, Yong Jin Kim, Yeong−Cheul Kim, Jin Suk Wang, Yoo Jeong Cho, Soon Young Oh
Publikováno v:
Japanese Journal of Applied Physics. 45:2980-2983
In this study, a highly thermal immune Ni–germanosilicide utilizing a 1%-nitrogen-doped nickel and a Co/TiN double capping layer is proposed for nano-scale complementary metal oxide semiconductor field effect transistors (CMOSFETs). It is shown tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a60d0b830eb5ddfb7bcef5ba68427478
https://doi.org/10.1143/jjap.45.2980
https://doi.org/10.1143/jjap.45.2980
Autor:
Agchbayar Tuya, W.J. Lee, J.G. Yun, S.Y. Oh, J.S. Wang, H.D. Lee, T. Wang, I.S. Han, H.H. Ji, Y.J. Kim
Publikováno v:
2005 IEEE Conference on Electron Devices and Solid-State Circuits.
Optimized nickel silicide technology is proposed for high performance fully depleted nano-scale SOI CMOSFETs. Nickel silicide properties with different initial nickel thicknesses were investigated on thin film SOI MOSFETs. Silicon consumption rate an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::263a6cb54f6436f71ab38f7cbb975077
https://doi.org/10.1109/edssc.2005.1635389
https://doi.org/10.1109/edssc.2005.1635389
Autor:
Hee-Hwan Ji, Ui-Sik Kim, Hi-Deok Lee, Yeong Cheol Kim, Won-Jae Lee, Yoo Jeong Cho, Jang-Gn Yun, Sang-Bum Heo, Jin-Suk Wang, Soon-Young Oh, Gil-Jin Han, Han-Seob Cha, Jeong-Gun Lee, Yong-Jin Kim, Agchbayar Tuya
Publikováno v:
Extended Abstracts of the Fifth International Workshop on Junction Technology.
In this paper, a novel Ni/Co/Ni/TiN structure to improve the thermal stability of NiSi by forming highly thermal stable ternary phase, i.e., (Co/sub x/Ni/sub 1-x/)Si/sub 2/ especially at the top region of NiSi is proposed. The Ni/Co/Ni/TiN structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee53c4264de238af815efe499aa6537b
https://doi.org/10.1109/iwjt.2005.203891
https://doi.org/10.1109/iwjt.2005.203891
Autor:
Soon-Young Oh, Jang-Gn Yun, Yong-Jin Kim, Won-Jae Lee, Agchbayar Tuya, Hee-Hwan Ji, Ui-Sik Kim, Han-Seob Cha, Sang-Bum Heo, Jeong-Gun Lee, Gil-Jin Han, Yoo Jeong Cho, Yeong Cheol Kim, Jin-Suk Wang, Hi-Deok Lee
Publikováno v:
Extended Abstracts of the Fifth International Workshop on Junction Technology; 2005, p93-94, 2p