Zobrazeno 1 - 3
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pro vyhledávání: '"Agbo, Nereus"'
Autor:
Bashar, Erfan, Agbo, Nereus, Wu, Ruizhu, Mendy, Simon, Jahdi, Saeed, Jennings, Michael, Withey, Andy, Evans, Sam, Davies, Gareth, Demitrova, Jana, Gonzalez, Jose Ortiz, Alatise, Olayiwola
Publikováno v:
Bashar, E, Agbo, N, Wu, R, Mendy, S, Jahdi, S, Jennings, M, Withey, A, Evans, S, Davies, G, Demitrova, J, Gonzalez, J O & Alatise, O 2022, A Review of Short Circuit Performance in 650 V Power Devices : SiC MOSFETs, Silicon Super-junction MOSFETs, SiC Cascode JFETs, Silicon MOSFETs and Silicon IGBTs . in PCIM Europe 2022 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management . PCIM Europe Conference Proceedings, VDE Verlag, pp. 1167-1174, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022, Nuremberg, Germany, 10/05/22 . https://doi.org/10.30420/565822162
Using measurements, a comprehensive analysis is performed on the short circuit (SC) performance and robustness of 650V power devices including SiC MOSFETs, SiC Cascode JFETs, silicon Super-Junction, silicon IGBTs and silicon MOSFETs. The peak SC curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2642::17508106287bc96f04d87a150ff59fe6
https://ieeexplore.ieee.org/document/9862185
https://ieeexplore.ieee.org/document/9862185
Autor:
Alatise, Olayiwola, Bashar, E., Wu, Ruizhu, Agbo, Nereus, Mendy, Simon, Jahdi, Saeed, Gonzalez, Jose Ortiz, Mawby, Philip
Publikováno v:
Alatise, O, Bashar, E, Wu, R, Agbo, N, Mendy, S, Jahdi, S, Gonzalez, J O & Mawby, P 2022, A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs . in 11th International Conference on Power Electronics, Machines and Drives (PEMD 2022) . Institution of Engineering and Technology (IET), Hybrid Conference, Newcastle, UK, pp. 335-339, 11th International Conference on Power Electronics, Machines and Drives (PEMD 2022), Newcastle, United Kingdom, 21/06/22 . https://doi.org/10.1049/icp.2022.1071
Short circuits that occur in power converters put the power semiconductor devices under considerable electrothermal stress. The electrothermal stress causes a rise in junction temperature and ultimately device failure if the thermal limits of the dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21816bfb5b7e7c29ddd8ca995221ebc6
https://doi.org/10.1049/icp.2022.1071
https://doi.org/10.1049/icp.2022.1071
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