Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Agata Bojarska"'
Autor:
Agata Bojarska-Cieślińska, Łucja Marona, Julita Smalc-Koziorowska, Szymon Grzanka, Jan Weyher, Dario Schiavon, Piotr Perlin
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract In this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown
Externí odkaz:
https://doaj.org/article/ad1ac300cccf4de3a4f0e4b600d3126c
Autor:
Krzysztof Gibasiewicz, Agata Bojarska-Cieślińska, Grzegorz Muziol, Czeslaw Skierbiszewski, Szymon Grzanka, Anna Kafar, Piotr Perlin, Stephen Najda, Tadeusz Suski, Lucja Marona
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70e9b59affd788397209a795f2b2dd36
https://doi.org/10.1117/12.2609763
https://doi.org/10.1117/12.2609763
Autor:
Marek Wzorek, Julita Smalc-Koziorowska, Agata Bojarska-Cieslinska, Szymon Grzanka, Dario Schiavon, Piotr Perlin, Tomasz Czyszanowski, Andrzej Czerwiński, Lucja Marona, P. Wisniewski, Szymon Stanczyk
Publikováno v:
ACS Applied Materials & Interfaces. 12:52089-52094
We studied degradation mechanisms of ultraviolet InGaN laser diodes emitting in the UVA range. Short wavelength nitride devices are subjected to much faster degradation, under the same packaging and testing conditions, than their longer wavelength co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5b2d9f0c190b0f3e6983297f91994b9
https://doi.org/10.1021/acsami.0c11864
https://doi.org/10.1021/acsami.0c11864
Autor:
Piotr Perlin, Szymon Grzanka, Stephen P. Najda, Krzysztof Gibasiewicz, Czeslaw Skierbiszewski, Anna Kafar, Agata Bojarska-Cieślińska, Tadeusz Suski, Grzegorz Muziol
Publikováno v:
Optics letters. 45(15)
We have fabricated tunnel-junction InGaN micro-LEDs using plasma-assisted molecular beam epitaxy technology, with top-down processing on GaN substrates. Devices have diameters between 5 µm and 100 µm. All of the devices emit light at 450 nm at a dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abb89d7750de42a0f2e3fa8bb4b5165e
https://pubmed.ncbi.nlm.nih.gov/32735291
https://pubmed.ncbi.nlm.nih.gov/32735291
Autor:
Julita Smalc-Koziorowska, Łucja Marona, Szymon Grzanka, Piotr Perlin, Agata Bojarska-Cieślińska, Dario Schiavon, Jan L. Weyher
Publikováno v:
Scientific Reports
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
In this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba811ee894329da1e79f107ba27f780b
https://pubmed.ncbi.nlm.nih.gov/33420146
https://pubmed.ncbi.nlm.nih.gov/33420146
Publikováno v:
Gallium Nitride Materials and Devices XV.
Our goal is to fabricate a laser diode 2D array which combines the properties of both VCSEL and edge emitting laser. Proposed light emitter will have a horizontal cavity with 450 deflectors. The role of these deflectors would be to deflect light perp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca1efd1b66d4379194d16c2f9e66c762
https://doi.org/10.1117/12.2544015
https://doi.org/10.1117/12.2544015
Autor:
C. De Santi, Matteo Meneghini, Piotr Perlin, Desiree Monti, Agata Bojarska, Enrico Zanoni, Gaudenzio Meneghesso
Publikováno v:
Microelectronics Reliability. :864-867
The aim of this paper is to illustrate the dependence of DLTS characteristics and degradation of InGaN-based laser diodes (LDs) on the density of dislocations. Three groups of multi-quantum well LDs with different dislocation densities were submitted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d26b997019fdc2d11b56dae5835f601
https://doi.org/10.1016/j.microrel.2018.06.055
https://doi.org/10.1016/j.microrel.2018.06.055
Autor:
Irina Makarowa, Jakub Goss, Piotr Perlin, Dario Schiavon, Robert Czernecki, Tadeusz Suski, Agata Bojarska, Szymon Stanczyk
Publikováno v:
Superlattices and Microstructures. 116:114-121
In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76a86fec1dcf48984e5ba0784fae142b
https://doi.org/10.1016/j.spmi.2018.02.016
https://doi.org/10.1016/j.spmi.2018.02.016
Autor:
Piotr Perlin, Przemek Wiśniewski, Agata Bojarska, Mike Leszczynski, Robert P. Sarzała, S. P. Najda, Irina Makarowa, Maciej Kuc, Tadek Suski, Szymon Stanczyk, Robert Czernecki, Łucja Marona, Anna Kafar
Publikováno v:
MRS Advances. 1:103-108
We demonstrated the fabrication of 10 emitters InGaN laser diode array of the maximum output power of 9 W at 420 nm. The device as a whole has the differential efficiency of above 1 W/A. The maximum output power is limited to 9 W (pulse operation) by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19e9bfd99641c199c736666a6d4b8492
https://doi.org/10.1557/adv.2016.132
https://doi.org/10.1557/adv.2016.132
Autor:
Henryk Teisseyre, Piotr Perlin, D. Jarosz, Lucja Marona, Tomasz Czyszanowski, Agata Bojarska, Vitalii Yu. Ivanov
Publikováno v:
physica status solidi (a). 218:2000344
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa0882463485b1a6cf7181bd41895fb3
https://doi.org/10.1002/pssa.202000344
https://doi.org/10.1002/pssa.202000344