Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Agaev, V. V."'
Autor:
Agaev, V. V.1, Arsent'ev, I. N.2 arsentyev@mail.ioffe.ru, Metreveli, S. G.1, Starosel'tseva, S. P.1, Yablochkina, G. I.1
Publikováno v:
Technical Physics Letters. Aug2006, Vol. 32 Issue 8, p709-711. 3p. 2 Graphs.
Publikováno v:
Technical Physics. Nov2004, Vol. 49 Issue 11, p1534-1535. 2p.
Autor:
Adachi, Sadao
Publikováno v:
Physical Properties of III-V Semiconductor Compounds; 1992, p295-313, 19p
Autor:
Trommer, R., Hoffmann, L.
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 03/27/1986, Vol. 22 Issue 7, p360-362, 3p
Autor:
Moglestue, C.
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 03/27/1986, Vol. 22 Issue 7, p397-398, 2p
Autor:
Michael S Shur, Gennady Sh Gildenblat, Yu A Goldberg, Michael E Levinshtein, Maya P Mikhailova, Sergey Rumyantsev, Natalya M Schmidt, Leonid Vorobjev, Alexander Ya Vul'
The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semi
In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheor