Zobrazeno 1 - 10
of 147
pro vyhledávání: '"Afzalian, Aryan"'
Self-heating effects can significantly degrade the performance in nanoscale devices. We investigate self-heating effects in such devices based on two-dimensional materials using ab-initio techniques. A new algorithm was developed to allow for efficie
Externí odkaz:
http://arxiv.org/abs/2405.13415
Autor:
Afzalian, Aryan, Ducry, Fabian
Publikováno v:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2023)
We investigate the trade-offs between accuracy and efficiency for several flavors of the dissipative mode-space NEGF algorithm with the self-consistent Born approximation for DFT Hamiltonians. Using these models, we then demonstrate the dissipative s
Externí odkaz:
http://arxiv.org/abs/2310.09029
We propose a novel Forked-Contacts, Dynamically-Doped Multigate transistor as ultimate scaling booster for both Si and 2D materials in aggressively-scaled nanosheet devices. Using accurate dissipative DFT-NEGF atomistic-simulation fundamentals and ce
Externí odkaz:
http://arxiv.org/abs/2203.06364
Publikováno v:
In Computer Physics Communications February 2025 307
We present, here, advanced DFT-NEGF techniques that we have implemented in our ATOmistic MOdelling Solver, ATOMOS, to explore transport in novel materials and devices and in particular in van-der-Waals heterojunction transistors. We describe our meth
Externí odkaz:
http://arxiv.org/abs/2106.07248
Autor:
Afzalian, Aryan
Using accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10 nm scaling for high-performance CMOS applications. We show that a combination of good electro
Externí odkaz:
http://arxiv.org/abs/2010.06867
Publikováno v:
In Solid State Electronics March 2023 201
Publikováno v:
In Solid State Electronics January 2023 199
Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET. The CS TFET line-tunneling current increases significantly with the co
Externí odkaz:
http://arxiv.org/abs/1809.11077
We report the capability to simulate in a quantum mechanical tight-binding (TB) atomistic fashion NW devices featuring several hundred to millions of atoms and diameter up to 18 nm. Such simulations go far beyond what is typically affordable with tod
Externí odkaz:
http://arxiv.org/abs/1705.00909