Zobrazeno 1 - 10
of 192
pro vyhledávání: '"Afanasiev, M."'
Autor:
Lukoshkin, V. A., Kalevich, V. K., Afanasiev, M. M., Kavokin, K. V., Hatzopoulos, Z., Savvidis, P. G., Sedov, E. S., Kavokin, A. V.
Publikováno v:
Phys. Rev. B 97, 195149 (2018)
We have experimentally observed an eddy current of exciton polaritons arising in a cylindrical GaAs/AlGaAs pillar microcavity under the nonresonant optical pumping. The polariton current manifests itself in a Mach-Zehnder interferometry image as a ch
Externí odkaz:
http://arxiv.org/abs/1709.06530
We have studied experimentally and theoretically the optical orientation and spin-dependent Shockley-Read-Hall recombination in a semiconductor in a magnetic field at an arbitrary angle between the field and circularly polarized exciting beam. The ex
Externí odkaz:
http://arxiv.org/abs/1602.04162
Autor:
Kalevich, V. K., Afanasiev, M. M., Lukoshkin, V. A., Solnyshkov, D. D., Malpuech, G., Kavokin, K. V., Tsintzos, S. I., Hatzopoulos, Z., Savvidis, P. G., Kavokin, A. V.
We observe condensation of exciton polaritons in quantum states composed of concentric rings when exciting cylindrical pillar GaAs/AlGaAs microcavities non-resonantly by a focused laser beam normally incident at the center of the pillar. The number o
Externí odkaz:
http://arxiv.org/abs/1411.3222
Autor:
Kalevich, V. K., Afanasiev, M. M., Lukoshkin, V. A., Kavokin, K. V., Tsintzos, S. I., Savvidis, P. G., Kavokin, A. V.
Optically generated exciton-polaritons in cylindric semiconductor pillar microcavity with embedded GaAs/AlGaAs quantum wells demonstrate a clear polariton lasing regime. When exciting in the center of the pillar we detect a ring-shaped emission, wher
Externí odkaz:
http://arxiv.org/abs/1312.7080
The intensity and the giant circular polarization of edge luminescence in a longitudinal magnetic field have been measured in nitrogen alloys GaAsN under circularly polarized pumping. It has been found that these dependences are shifted with respect
Externí odkaz:
http://arxiv.org/abs/1210.3302
We have found that intensity $I$ and circular polarization degree $\rho$ of the edge photoluminescence, excited in GaAsN alloys by circularly polarized light at room temperature, grow substantially in the longitudinal magnetic field $B$ of the order
Externí odkaz:
http://arxiv.org/abs/1107.2250
We present a systematic theoretical study of spin-dependent recombination and its effect on optical orientation of photoelectron spins in semiconductors with deep paramagnetic centers. For this aim we generalize the Shockley-Read theory of recombinat
Externí odkaz:
http://arxiv.org/abs/1008.4755
Autor:
Kalevich, V. K., Ivchenko, E. L., Shiryaev, A. Yu., Afanasiev, M. M., Egorov, A. Yu., Ikezawa, M., Masumoto, Y.
Positive signs of the effective g-factors for free electrons in the conduction band and electrons localized on deep paramagnetic centers have been measured in nitrogen dilute alloy GaAs{0.979}N{0.021} at room temperature. The g-factor signs have been
Externí odkaz:
http://arxiv.org/abs/0807.2842
Autor:
Kalevich, V. K., Ivchenko, E. L., Afanasiev, M. M., Egorov, A. Yu., Shiryaev, A. Yu., Ustinov, V. M., Pal, B., Masumoto, Y.
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the polarization
Externí odkaz:
http://arxiv.org/abs/cond-mat/0508222
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