Zobrazeno 1 - 10
of 340
pro vyhledávání: '"Aeppli,Gabriel"'
Autor:
Burri, Corinna, Hua, Nelson, Sanchez, Dario Ferreira, Hu, Wenxiang, Bell, Henry G., Venturini, Rok, Huang, Shih-Wen, McConnell, Aidan G., Dizdarevic, Faris, Mraz, Anze, Svetin, Damjan, Lipovsek, Benjamin, Topic, Marko, Kazazis, Dimitrios, Aeppli, Gabriel, Grolimund, Daniel, Ekinci, Yasin, Mihailovic, Dragan, Gerber, Simon
In transition metal dichalcogenides a plethora of emergent states arise from competing electron-electron and electron-phonon interactions. Among these, the non-volatile metallic 'hidden' state of 1T-TaS2 can be induced from its insulating equilibrium
Externí odkaz:
http://arxiv.org/abs/2411.04830
Autor:
D'Anna, Nicolò, Bragg, Jamie, Skoropata, Elizabeth, Hernández, Nazareth Ortiz, McConnell, Aidan G., Clémence, Maël, Ueda, Hiroki, Constantinou, Procopios C., Spruce, Kieran, Stock, Taylor J. Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Sanchez, Dario Ferreira, Grolimund, Daniel, Staub, Urs, Matmon, Guy, Gerber, Simon, Aeppli, Gabriel
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consi
Externí odkaz:
http://arxiv.org/abs/2410.00241
We report on the induction of magnetization in Rydberg systems by means of the inverse Faraday effect, and propose the appearance of the effect in two such systems, Rydberg atoms proper and shallow dopants in semiconductors. Rydberg atoms are charact
Externí odkaz:
http://arxiv.org/abs/2409.08088
Autor:
Tseng, Li-Ting, Karadan, Prajith, Kazazis, Dimitrios, Constantinou, Procopios C., Stock, Taylor J. Z., Curson, Neil J., Schofield, Steven R., Muntwiler, Matthias, Aeppli, Gabriel, Ekinci, Yasin
Publikováno v:
L.-T. Tseng, Science Advances, Vol 9, eadf5997 (2023)
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolu
Externí odkaz:
http://arxiv.org/abs/2310.01268
Autor:
Constantinou, Procopios, Stock, Taylor J. Z., Crane, Eleanor, Kölker, Alexander, van Loon, Marcel, Li, Juerong, Fearn, Sarah, Bornemann, Henric, D'Anna, Nicolò, Fisher, Andrew J., Strocov, Vladimir N., Aeppli, Gabriel, Curson, Neil J., Schofield, Steven R.
Two-dimensional dopant layers ($\delta$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknes
Externí odkaz:
http://arxiv.org/abs/2309.17413
Autor:
Della Valle, Enrico, Constantinou, Procopios, Schmitt, Thorsten, Aeppli, Gabriel, Strocov, Vladimir N.
Angle-resolved photoemission spectroscopy (ARPES) is one of the most ubiquitous characterization techniques utilized in the field of condensed matter physics. The resulting spectral intensity consists of a coherent and incoherent part, whose relative
Externí odkaz:
http://arxiv.org/abs/2308.03707
Autor:
Zhang, Wenliang, Asmara, Teguh Citra, Tseng, Yi, Li, Junbo, Xiong, Yimin, Wei, Yuan, Yu, Tianlun, Galdino, Carlos William, Zhang, Zhijia, Kummer, Kurt, Strocov, Vladimir N., Soh, Y., Schmitt, Thorsten, Aeppli, Gabriel
Publikováno v:
Nature Communications 15, 8905 (2024)
Special arrangements of atoms with more than one atom per unit cell, including honeycomb or kagome (woven bamboo mat) lattices, can host propagating excitations with non-trivial topology as defined by their evolution along closed paths in momentum sp
Externí odkaz:
http://arxiv.org/abs/2302.01457
Autor:
Ekahana, Sandy Adhitia, Winata, Genta Indra, Soh, Y., Aeppli, Gabriel, Milan, Radovic, Shi, Ming
Recent development in angle-resolved photoemission spectroscopy (ARPES) technique involves spatially resolving samples while maintaining the high-resolution feature of momentum space. This development easily expands the data size and its complexity f
Externí odkaz:
http://arxiv.org/abs/2208.10893
Autor:
Kuzmanovski, Dushko, Schmidt, Jonathan, Spaldin, Nicola A., Rønnow, Henrik M., Aeppli, Gabriel, Balatsky, Alexander V.
Publikováno v:
Physical Review X 14, 021016 (2024)
Dynamical perturbations modify the states of classical systems in surprising ways and give rise to important applications in science and technology. For example, Floquet engineering exploits the possibility of band formation in the frequency domain w
Externí odkaz:
http://arxiv.org/abs/2208.09491
Autor:
D'Anna, Nicolò, Sanchez, Dario Ferreira, Matmon, Guy, Bragg, Jamie, Constantinou, Procopios C., Stock, Taylor J. Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Bartkowiak, Marek, Soh, Y., Grolimund, Daniel, Gerber, Simon, Aeppli, Gabriel
Publikováno v:
Adv. Electron. Mater. 2023, 2201212
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsen
Externí odkaz:
http://arxiv.org/abs/2208.09379