Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Aein S. Babadi"'
Autor:
Andrea Troian, Johan V. Knutsson, Sarah R. McKibbin, Sofie Yngman, Aein S. Babadi, Lars-Erik Wernersson, Anders Mikkelsen, Rainer Timm
Publikováno v:
AIP Advances, Vol 8, Iss 12, Pp 125227-125227-8 (2018)
Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the In
Externí odkaz:
https://doaj.org/article/f5826e7ec9214ecaab1bc10e1d49d575
Publikováno v:
The journal of physical chemistry letters. 12(14)
In situ monitoring of gas phase composition reveals the link between the changing gas phase chemistry during atomic layer deposition (ALD) half-cycle reactions and the electronic conductivity of ALD-TiO2 thin films. Dimethylamine ((CH3)2NH, DMA) is p
Autor:
Olivia L. Hendricks, Aein S. Babadi, Robert Tang-Kong, Christopher E. D. Chidsey, Paul C. McIntyre
Publikováno v:
Chemistry of Materials. 31:90-100
We synthesized by atomic layer deposition (ALD) TiO2–IrOx alloys that enable high photovoltages and catalyze water oxidation on silicon metal–insulator–semiconductor (MIS) photoanodes. The ratio of TiO2 to IrOx was precisely controlled by varyi
Autor:
Erik Lind, Rainer Timm, Jun Wu, Aein S. Babadi, Lars-Erik Wernersson, Sofie Yngman, Jovana Colvin, Daniel Jacobsson
Publikováno v:
Nano Letters. 16:2418-2425
In this paper, we correlate the growth of InAs nanowires with the detailed interface trap density (Dit) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric gate stack. We also perform the first detailed characterization a
Publikováno v:
IEEE Transactions on Electron Devices. 63:584-589
This paper presents RF as well as low-frequency capacitance–voltage ( $C$ – $V$ ) characterization of vertical wrap-gated InAs/high- $\kappa $ nanowire MOS capacitors. A full equivalent circuit model for traps is used to fit the low-frequency $C$
Autor:
Andrea R. Bowring, Wanliang Tan, Andrew C. Meng, Paul C. McIntyre, Aein S. Babadi, Michael D. McGehee, Robert Tang-Kong
Publikováno v:
Advanced Materials Interfaces. 7:1902054
Autor:
Johan Knutsson, Aein S. Babadi, Lars-Erik Wernersson, Anders Mikkelsen, Sofie Yngman, Rainer Timm, Andrea Troian, Sarah R. McKibbin
Publikováno v:
AIP Advances, Vol 8, Iss 12, Pp 125227-125227-8 (2018)
Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the In
Publikováno v:
Applied Physics Letters. 108:132904
The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxide
Publikováno v:
Journal of Applied Physics. 116:214508
A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface an