ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETS IN THE QUASI BALLISTIC REGIME

Autor: Gerard Ghibaudo, Raphael Clerc

Publikováno v: International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2013, 22 (1), pp.1350002. ⟨10.1142/S012915641350002X⟩

International audience; The quasi-ballistic nature of transport in end of the roadmap MOSFETs device is expected to lead to significant on state current enhancement. The current understanding of such mechanism of transport is carefully reviewed in th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ba1a359492bc68c7a59a5b93c2f8611
https://hal.archives-ouvertes.fr/hal-00917094/document

Characterization of Electron Transport in Short channel MOS Transistors

Autor: Subramanian, Narasimhamoorthy

Publikováno v: Autre. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENT093⟩

Electron transport is one of the key properties that need to be improved in order to sustain performance improvement for the next technological nodes. Many factors, such as the choice of gate stack materials, channel material or the presence of mecha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c951a60790311bfa0b03f0a902e3df90
https://theses.hal.science/tel-00720613

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