Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Adulfas ABRUTIS"'
Autor:
Artūras JUKNA, Lina STEPONAVIČIENĖ, Andrius MANEIKIS, Adulfas ABRUTIS, Vaclovas LISAUSKAS, Kristina ŠLIUŽIENĖ, Roman SOBOLEWSKI
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 215-219 (2014)
This work reports on investigation of remnant oxygen content in optically-modified regions of 0.3-mm-thick YBa2Cu3O7–x films, patterned by a laser-writing technique in an inert ambient gas atmosphere at room temperature. A laser-treated region of w
Externí odkaz:
https://doaj.org/article/1c759840012e4a918e291e8ba8f32165
Autor:
Jonas GRADAUSKAS, Artūras JUKNA, Jonas ŠULCAS, Algirdas SUŽIEDĖLIS, Adulfas ABRUTIS, Vaclovas LISAUSKAS, Andrius MANEIKIS, Kristina ŠLIUŽIENĖ
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 210-214 (2014)
Results of our research demonstrate possibilities of detection of microwaves radiation by means of asymmetrically narrowed YBa2Cu3O7-x oxygen-rich (x ≤ 0.2) and oxygen-decomposed (x > 0.5) in the necked region at temperatures higher than the critic
Externí odkaz:
https://doaj.org/article/bcbe58f1e2b34843a1b578a7b869c65c
Autor:
Lina STEPONAVICIENE, Jonas SULCAS, Arturas JUKNA, Valentina PLAUSINAITIENE, Adulfas ABRUTIS, Mufei GONG, Roman SOBOLEWSKI
Publikováno v:
Medžiagotyra, Vol 17, Iss 2, Pp 180-185 (2011)
The 0.3-mm-thick, 50-mm-wide and 100-mm-long YBa2Cu3O7-x superconducting bridges with a laser-written, single, Π-shaped channel have been investigated by means of electronic transport measurements at temperatures below the onset of the bridge's supe
Externí odkaz:
https://doaj.org/article/75412ffbea254365b55159d22e7fc316
Precise composition control and cation nonstoichiometry in La-doped BaSnO3 thin films grown by MOCVD
Autor:
Adulfas Abrutis, Rimantas Raudonis, T. Murauskas, V. Kubilius, Valentina Plausinaitiene, Martynas Talaikis, Gediminas Niaura
Publikováno v:
Journal of Alloys and Compounds. 898:162843
La:BaSnO3 has recently emerged as an outstanding perovskite oxide material due to its high electron mobility. To-date, lower electron mobility in thin films compared to the single-crystal are discussed in terms of the presence of dislocations, nearly
Autor:
Corinna Hegemann, Thomas Fischer, Jiri Pinkas, Valentina Plausinaitiene, Michal Babiak, Zdenek Moravec, T. Murauskas, David Graf, Adulfas Abrutis, Jan Podhorsky, Sanjay Mathur
Publikováno v:
European Journal of Inorganic Chemistry. 2018:5027-5035
Trifluoroacetonylazines were used in this work to prepare complexes of tin(IV). Five complexes were obtained and their structures, behavior and suitability for PI-MOCD were investigated. Two of those complexes are suitable as precursors for the fabri
Autor:
Martynas Skapas, Voitech Stankevic, Remigijus Juskenas, Valentina Plausinaitiene, Remigijus Vasiliauskas, Adulfas Abrutis, Jonas Klimantavicius, Saulius Balevicius, Dainius Pavilonis, Nerija Zurauskiene
Publikováno v:
IEEE Transactions on Plasma Science. 45:2773-2779
Autor:
Sabina Kuprenaite, Vincent Astié, Samuel Margueron, Cyril Millon, Jean-Manuel Decams, Zita Saltyte, Pascal Boulet, Valentina Plausinaitiene, Adulfas Abrutis, Ausrine Bartasyte
Publikováno v:
Coatings
Volume 9
Issue 1
Coatings, Basel : MDPI AG, 2019, vol. 9, iss. 1, art. no. 35, p. [1-15]
Coatings, MDPI, 2019, 9 (1), pp.35. ⟨10.3390/coatings9010035⟩
Coatings, Vol 9, Iss 1, p 35 (2019)
Volume 9
Issue 1
Coatings, Basel : MDPI AG, 2019, vol. 9, iss. 1, art. no. 35, p. [1-15]
Coatings, MDPI, 2019, 9 (1), pp.35. ⟨10.3390/coatings9010035⟩
Coatings, Vol 9, Iss 1, p 35 (2019)
Precision control of resistivity/conductivity of LaNiO3 (LNO) films is essential for their integration as electrodes in the functional heterostructures. This becomes possible if the relationship between processing parameters&ndash
composition&nd
composition&nd
Autor:
L. Silimavicius, Adulfas Abrutis, Z. Saltyte, V. Kubilius, S. Kuprenaite, Valentina Plausinaitiene, T. Murauskas, A. Arkhangelskiy
Publikováno v:
Integrated Ferroelectrics. 173:128-139
Al-doped ZnO films were grown on different orientation sapphire substrates (sapphire-R, C, M, A) at 400–600 °C via the atmospheric pressure aerosol-assisted MOCVD technique. The influence of deposition temperature and orientation of sapphire subst
Autor:
T. Murauskas, Z. Saltyte, V. Kubilius, S. Kuprenaite, Adulfas Abrutis, Valentina Plausinaitiene
Publikováno v:
Thin Solid Films. 599:19-26
Epitaxial films of Al-doped ZnO were grown at 400 °C on sapphire-R substrates at atmospheric pressure via the aerosol-assisted MOCVD technique. The film microstructure, surface morphology, and electrical and optical properties were investigated in r
Autor:
Z. Saltyte, Valentina Plausinaitiene, S. Kuprenaite, T. Murauskas, Adulfas Abrutis, V. Kubilius
Publikováno v:
Surface and Coatings Technology. 271:156-164
In-, Ga- and Al-doped ZnO films were grown via the aerosol-assisted MOCVD technique using the following air-stable metal-organic precursors: Zn(thd)2, In(thd)3, Al(thd)3 and Ga(acac)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, acac = acetylacetonat