Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Adrija Mukherjee"'
Autor:
Sudipta Ghosh, Priyanka Saha, Adrija Mukherjee, Sayan Bose, P. Venkateswaran, Subir Kumar Sarkar
Publikováno v:
Silicon. 14:9091-9102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24ebcb75e744d3dc2a6a4f5390edb25c
https://doi.org/10.1007/s12633-022-01690-y
https://doi.org/10.1007/s12633-022-01690-y
Publikováno v:
Microelectronics Journal. 133:105689
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46f19d062b9f2dd168639bd391430e99
https://doi.org/10.1016/j.mejo.2023.105689
https://doi.org/10.1016/j.mejo.2023.105689
Publikováno v:
Semiconductor Science and Technology. 37:115013
In this paper we investigate a junction-less dual-gate metal–oxide–semiconductor field effect transistor (JL-DG-MOSFET)-based programmable inverter with an oxide–nitride–oxide (SiO2/Si3N4/SiO2) gate stack, which offers short-/long-term memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fe8482a5acda398f2564d2266eb7c35
https://doi.org/10.1088/1361-6641/ac92a3
https://doi.org/10.1088/1361-6641/ac92a3
Publikováno v:
2021 Devices for Integrated Circuit (DevIC).
In this work, the performance of a Double-Gate Junctionless MOSFET (DGJLT) is reported for low power digital applications. The model is based physically, considering both the inversion and accumulation operating conditions. The analysis demonstrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86cc61355e8df5757c428f28715812fa
https://doi.org/10.1109/devic50843.2021.9455793
https://doi.org/10.1109/devic50843.2021.9455793
Autor:
Adrija Mukherjee, Debankan Das, Papiya Debnath, Manash Chanda, Baishali Ray, Shaon Bhattacharyya
Publikováno v:
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS).
The impact of temperature and self-heating effects on the performance of junctionless double gate MOSFET has been analyzed in this paper. Mainly the sub-threshold regime has been considered to investigate the heating effect on circuit performance as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f80ff2a55ccd2e1cee5fe1258bd3d6b
https://doi.org/10.1109/vlsidcs47293.2020.9179918
https://doi.org/10.1109/vlsidcs47293.2020.9179918
Publikováno v:
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS).
An assessment of charge plasma (CP) based biosensing between junction less (JL) and conventional devices for label-free electrical identification of analytes, especially DNA, has been examined here in detail. The impact of variations of charge analyt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f71f82e26d1c416a1688bd700bb3173f
https://doi.org/10.1109/vlsidcs47293.2020.9179747
https://doi.org/10.1109/vlsidcs47293.2020.9179747