Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Adrianus Willem Ludikhuize"'
Publikováno v:
Microelectronics Reliability. 40:1263-1266
We have investigated the relation between the electrostatic discharge (ESD) level achieved by vertical deflection amplifiers, used for television sets, and other discharge events affecting the reliability. In particular, it is known that the tubes of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1562b7f076be5fabe85b743aefdcab4
https://doi.org/10.1016/s0026-2714(00)00114-1
https://doi.org/10.1016/s0026-2714(00)00114-1
Autor:
E.R. Ooms, J.A. van der Pol, Maarten Jacobus Swanenberg, G.J.J. Hessels, J.H.H.A. Egbers, H. van der Vlist, Anco Heringa, P. van Kessel, M. Stoutjesdijk, B. van Velzen, A. Padiy, Adrianus Willem Ludikhuize
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
In this paper the extension to 180 V of a compact 0.6 /spl mu/m Silicon-on-Insulator BCD-technology on 1 /spl mu/m Buried Oxide is discussed. DMOS performance (n- and p-type) at 180 V has been simulated after calibration on 120 V devices and first ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15300dda85262252f10ef70fb58629a2
https://doi.org/10.1109/ispsd.2002.1016175
https://doi.org/10.1109/ispsd.2002.1016175
Autor:
Adrianus Willem Ludikhuize
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
The paper reports a novel low-ohmic 6 m/spl Omega/.mm/sup 2/ LDMOS transistor with breakdown voltage of 15 V, above 10 V full operational voltage and R/sub on/*Q/sub gd/ (10 V/sub ds/)=11 m/spl Omega/.nC, integrated in a 0.6 /spl mu/m BCD IC process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eef2e8e50ddccf885c121de4e44f1e4f
https://doi.org/10.1109/ispsd.2002.1016231
https://doi.org/10.1109/ispsd.2002.1016231
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
An integrated low-substrate-leakage diode structure is considered, operated in reverse breakdown mode, having a parasitic npn transistor. At high current, the Kirk effect, causing shift of the potential by the space charge of moving carriers, leads t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b14ca81d2fcda7279382238e3b6c56fe
https://doi.org/10.1109/ispsd.2000.856794
https://doi.org/10.1109/ispsd.2000.856794
Autor:
Adrianus Willem Ludikhuize
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
RESURF (Reduced Surface Field) technology is one of the most widely-used methods for the design of lateral high-voltage, low on-resistance devices. The technique has allowed the integration of HV devices, ranging from 20 V to 1200 V, with bipolar and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b551e07df470661328cde76217b61321
https://doi.org/10.1109/ispsd.2000.856763
https://doi.org/10.1109/ispsd.2000.856763