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pro vyhledávání: '"Adrianus Matthew Sukuramsyah"'
Autor:
Adrianus Matthew Sukuramsyah, Jasmin Aghassi-Hagmann, Mehdi B. Tahoori, Gabriel Cadilha Marques, Surya Abhishek Singaraju, Yaroslav E. Romanyuk, Eloi Ramon, August Arnal Rus, Abdessalem Aribia, Xiaowei Feng, Sami Bolat
Publikováno v:
IEEE Electron Device Letters. 41:187-190
Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c7ed664ba627f9690eacc2859cf4e8
https://doi.org/10.1109/led.2019.2956346
https://doi.org/10.1109/led.2019.2956346
