Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Adriano Díaz Fattorini"'
Autor:
Marco Bertelli, Adriano Díaz Fattorini, Sara De Simone, Sabrina Calvi, Riccardo Plebani, Valentina Mussi, Fabrizio Arciprete, Raffaella Calarco, Massimo Longo
Publikováno v:
Nanomaterials, Vol 12, Iss 12, p 2001 (2022)
The morphological, structural, and electrical properties of as-grown and annealed Ge2Sb2Te5 (GST) layers, deposited by RF-sputtering on flexible polyimide, were studied by means of optical microscopy, atomic force microscopy, X-ray diffraction, Raman
Externí odkaz:
https://doaj.org/article/d2f546e40ec14ec0b336d7d40a20dbaf
Autor:
Adriano Díaz Fattorini, Caroline Chèze, Iñaki López García, Christian Petrucci, Marco Bertelli, Flavia Righi Riva, Simone Prili, Stefania M. S. Privitera, Marzia Buscema, Antonella Sciuto, Salvatore Di Franco, Giuseppe D’Arrigo, Massimo Longo, Sara De Simone, Valentina Mussi, Ernesto Placidi, Marie-Claire Cyrille, Nguyet-Phuong Tran, Raffaella Calarco, Fabrizio Arciprete
Publikováno v:
Nanomaterials, Vol 12, Iss 8, p 1340 (2022)
In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties a
Externí odkaz:
https://doaj.org/article/17cb6adfb4f64be2b0c5701ffca7fd2d
Autor:
Marco Bertelli, Gianfranco Sfuncia, Sara De Simone, Adriano Diaz Fattorini, Sabrina Calvi, Valentina Mussi, Fabrizio Arciprete, Antonio M. Mio, Raffaella Calarco, Massimo Longo
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract Matching of various chalcogenide films shows the advantage of delivering multilayer heterostructures whose physical properties can be tuned with respect to the ones of the constituent single films. In this work, (Ge–Sb–Te)-based heterost
Externí odkaz:
https://doaj.org/article/8d83fd7c211840b59a75807f2151fb86
Autor:
Caroline Chèze, Flavia Righi Riva, Giulia Di Bella, Ernesto Placidi, Simone Prili, Marco Bertelli, Adriano Diaz Fattorini, Massimo Longo, Raffaella Calarco, Marco Bernasconi, Omar Abou El Kheir, Fabrizio Arciprete
Publikováno v:
Nanomaterials, Vol 12, Iss 6, p 1007 (2022)
In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physic
Externí odkaz:
https://doaj.org/article/8475dc6a89a044628023681cf07d640d
Autor:
Marco Bertelli, Adriano Díaz Fattorini, Sara De Simone, Sabrina Calvi, Riccardo Plebani, Valentina Mussi, Fabrizio Arciprete, Raffaella Calarco, Massimo Longo
Publikováno v:
Nanomaterials; Volume 12; Issue 12; Pages: 2001
Nanomaterials, 12 (12), art. no. 2001
Nanomaterials, 12 (12), art. no. 2001
The morphological, structural, and electrical properties of as-grown and annealed Ge2Sb2Te5 (GST) layers, deposited by RF-sputtering on flexible polyimide, were studied by means of optical microscopy, atomic force microscopy, X-ray diffraction, Raman