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pro vyhledávání: '"Adrian-Stefan Manea"'
Autor:
Florica Ungureanu, Constantin Logofatu, Corneliu Ghica, Catalin-Constantin Negrila, R. V. Ghita, Costel Cotirlan, Adrian-Stefan Manea, Mihail-Florin Lazarescu
Publikováno v:
Crystalline Silicon-Properties and Uses
Due to its dominant role in silicon devices technologies [1, 2] the SiO2/Si interface has been intensively studied in the last five decades. The ability to form a chemically stable protective layer of silicon dioxide (SiO2) at the surface of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffcdf8f17cd8f994a34e3a3830b5e67c
http://www.intechopen.com/articles/show/title/study-of-sio2-si-interface-by-surface-techniques
http://www.intechopen.com/articles/show/title/study-of-sio2-si-interface-by-surface-techniques
