Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Adrian Stefan Avramescu"'
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
Autor:
Steffen Bornemann, Christoph Margenfeld, Adrian Stefan Avramescu, Tobias Voss, Marius Grundmann, Jörgen Jungclaus, Zhipeng Zhang, Florian Meierhofer, Irene Manglano Clavero, Andreas Waag, Dominik Scholz, Hendrik Spende, Daniel Splith, Karen K. Gleason, Hans-Jürgen Lugauer, Holger von Wenckstern, Tilman Schimpke, Martin Strassburg, Linus Krieg, Jana Hartmann, Xiaoxue Wang, Stefan Leis, Sascha Gorny
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Nature communications, 11, Article number: 5092 (2020), DOI 10.1038/s41467-020-18914-7--Nat Commun--https://www.nature.com/ncomms/--http://www.bibliothek.uni-regensburg.de/ezeit/?2553671--2041-1723--2041-1723
Nature Communications
Nature communications, 11, Article number: 5092 (2020), DOI 10.1038/s41467-020-18914-7--Nat Commun--https://www.nature.com/ncomms/--http://www.bibliothek.uni-regensburg.de/ezeit/?2553671--2041-1723--2041-1723
Nature Communications
The combination of inorganic semiconductors with organic thin films promises new strategies for the realization of complex hybrid optoelectronic devices. Oxidative chemical vapor deposition (oCVD) of conductive polymers offers a flexible and scalable
Autor:
Hendrik Spende, Drolet Jean-Jacques, Hans-Jürgen Lugauer, Adrian Stefan Avramescu, Stefan Wolter, Jan Gülink, Jana Hartmann, Andreas Waag, Norwin Von Malm, Andreas Lex, Hergo-Heinrich Wehmann, Martin Strassburg
Publikováno v:
Nanomaterials
Volume 11
Issue 4
Nanomaterials 2021, 11(4), 836; https://doi.org/10.3390/nano11040836--Nanomaterials (Basel)--http://www.bibliothek.uni-regensburg.de/ezeit/?2662255--http://www.mdpi.com/journal/nanomaterials--https://www.ncbi.nlm.nih.gov/pmc/journals/3130/--2079-4991--2079-4991
Nanomaterials, Vol 11, Iss 836, p 836 (2021)
Volume 11
Issue 4
Nanomaterials 2021, 11(4), 836; https://doi.org/10.3390/nano11040836--Nanomaterials (Basel)--http://www.bibliothek.uni-regensburg.de/ezeit/?2662255--http://www.mdpi.com/journal/nanomaterials--https://www.ncbi.nlm.nih.gov/pmc/journals/3130/--2079-4991--2079-4991
Nanomaterials, Vol 11, Iss 836, p 836 (2021)
Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of μLEDs in augmented reality displays or for nanometrology and sen
Autor:
Hans-Juergen Lugauer, Benoit Deveaud, Gwénolé Jacopin, Georg Rossbach, Tilman Schimpke, Wei Liu, Christian Mounir, Martin Strassburg, Ulrich T. Schwarz, Adrian Stefan Avramescu
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2019, 100 (23), pp.235301. ⟨10.1103/PhysRevB.100.235301⟩
Physical Review B, American Physical Society, 2019, 100 (23), pp.235301. ⟨10.1103/PhysRevB.100.235301⟩
We study the influence of local inhomogeneities on carrier recombination dynamics in single InGaN/GaN core-shell microrods (MRs) by means of time-resolved microphotoluminescence (TRPL) at 10 K. At low carrier density ($\ensuremath{\sim}{10}^{11}\phan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ebd5d79ec75903df1e61a6403727043
https://hal.archives-ouvertes.fr/hal-02397516/document
https://hal.archives-ouvertes.fr/hal-02397516/document
Publikováno v:
Journal of Applied Physics. 130:024505
In this work, we studied p-i-n InGaN/GaN core-shell microrod (μrod) LEDs using confocal microscopy with a spatial resolution below 500 nm in all three dimensions. At low excitation conditions, the devices emit in the red spectral range, while green
Autor:
Tansen Varghese, Johannes Ledig, Frederik Steib, Martin Dr. Straßburg, Adrian Stefan Avramescu, Lars Nicolai, Achim Trampert, Andreas Waag, Hergo-Heinrich Wehmann, Tilman Schimpke, Hans-Jürgen Lugauer, Hao Zhou, Jana Hartmann, Sönke Fündling
Publikováno v:
Journal of Crystal Growth. 476:90-98
GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are use
Autor:
Hao Zhou, Matin Sadat Mohajerani, Martin Strassburg, Barbara Szafranski, Adrian Stefan Avramescu, Tobias Voss, Jana Hartmann, Hergo-Heinrich Wehmann, Tilman Schimpke, Angelina Vogt, Andreas Waag, Sönke Fündling
Publikováno v:
Journal of Materials Research. 32:2456-2463
The spectrally and temporally resolved luminescence of three-dimensional (3D) InGaN/GaN microrods and planar light emitting diode (LED) structures is studied for different energy densities of fs-laser excitation pulses and for different sample temper
Autor:
Andreas Koller, Jana Hartmann, Hans-Jürgen Lugauer, Adrian Stefan Avramescu, Andreas Waag, Tilman Schimpke, Amalia Fernando-Saavedra, Johannes Ledig, Martin Strassburg
Publikováno v:
Journal of Crystal Growth, ISSN 0022-0248, 2016-05, Vol. 465
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
A core-shell geometry is employed for most next-generation, three-dimensional opto-electric devices based on III–V semiconductors and grown by metal organic vapor phase epitaxy (MOVPE). Controlling the shape of the shell layers is fundamental for d
Autor:
Andreas Waag, Achim Trampert, Irene Manglano Clavero, Christoph Margenfeld, Hao Zhou, Hendrik Spende, Frederik Steib, Hergo-Heinrich Wehmann, Hans-Jürgen Lugauer, Jana Hartmann, Lars Nicolai, Martin Strassburg, Angelina Jaros, Tobias Voss, Johannes Ledig, Adrian Stefan Avramescu
Publikováno v:
Phys. Status Solidi B, 256, 1800477, 2019--Proceedings of the ... International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors--0370-1972
GaN fins on GaN-on-sapphire templates are fabricated by continuous mode selective area metalorganic vapor phase epitaxy. The fins exhibit high aspect ratios and smooth nonpolar a-plane sidewalls with an ultra-low threading dislocation density of a fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e2a595958893492726d1155a1a43d9f
Autor:
Adrian Stefan Avramescu, Benoit Deveaud, Georg Rossbach, Wei Liu, Hans-Juergen Lugauer, Tilman Schimpke, Christian Mounir, Martin Strassburg, Ulrich T. Schwarz, Gwénolé Jacopin
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2018, 112 (5), pp.052106. ⟨10.1063/1.5009728⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (5), pp.052106. ⟨10.1063/1.5009728⟩
The optical properties of InGaN/GaN core-shell microrods are studied by time-resolved cathodoluminescence. Probing the carrier dynamics along the length of the rod from 4 to 300 K enables us to decompose radiative (τr) and non-radiative (τnr) lifet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26361d1f1a2e80e5aba801847b4303c5
https://hal.archives-ouvertes.fr/hal-01981682
https://hal.archives-ouvertes.fr/hal-01981682
Autor:
Andreas Rosenauer, Frank Bertram, Jürgen Christen, Knut Müller-Caspary, Marcus Müller, Peter Veit, Sebastian Metzner, Thorsten Mehrtens, Adrian Stefan Avramescu, Tilman Schimpke, Martin Strassburg, Florian F. Krause
Publikováno v:
Nano letters. 16(9)
Nitride-based three-dimensional core-shell nanorods (NRs) are promising candidates for the achievement of highly efficient optoelectronic devices. For a detailed understanding of the complex core-shell layer structure of InGaN/GaN NRs, a systematic d