Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Adrian R. Hartman"'
Autor:
Alfonso Piccirilli, Mike Ter Louw, Adrian R. Hartman, Lloyd Greenwald, Marc Jay Beacken, Michael J. Geller, Dominick J. Imbesi, Michael J. Chen, David J. Bishop, Linda Braun
Publikováno v:
Bell Labs Technical Journal. 16:5-28
In this paper we review some of the recent research in LGS's Government Communications Laboratory. In areas as far ranging as photonics, wireless/cellular systems, and Internet research, LGS is doing cutting edge work that solves important problems f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf1753d68b968ce421eb422f0b441ef6
https://doi.org/10.1002/bltj.20519
https://doi.org/10.1002/bltj.20519
Publikováno v:
IEEE Journal of Solid-State Circuits. 13:210-218
A 4/spl times/8 p-n-p-n crosspoint array for telephone switching networks is described which uses a junction isolated structure to achieve low substrate leakage. The structure uses collector diffusion isolation in conjunction with gold doping to redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4938a33e1f576b6ee501479c3102fc9
https://doi.org/10.1109/jssc.1978.1051021
https://doi.org/10.1109/jssc.1978.1051021
Publikováno v:
1976 International Electron Devices Meeting.
An integrated circuit technology has been developed to fabricate a matrix array of 32 junction isolated Silicon Controlled Rectifiers (SCR) for telephone switching systems. Other integrated SCR arrays have employed the more complicated dielectric or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1079af75d37927089bc1a4974caf0c61
https://doi.org/10.1109/iedm.1976.188984
https://doi.org/10.1109/iedm.1976.188984
Autor:
Y.H. Wong, M.A. Shibib, James Elwood Kohl, Hans W. Becke, R.K. Smith, Adrian R. Hartman, J.E. Berthold, J.C. Gammel, Harry T. Weston
Publikováno v:
1982 International Electron Devices Meeting.
A new gated diode crosspoint integrated circuit has been developed for telephone switching system applications. Central to the design of this high voltage device has been the extensive use of numerical modeling techniques. Two-dimensional simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e798ec05e371019b69d6670b29e7d2a9
https://doi.org/10.1109/iedm.1982.190219
https://doi.org/10.1109/iedm.1982.190219
Autor:
Adrian R. Hartman, J.E. Berthold
Publikováno v:
1981 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc7e9c0dd4410cd073d8bd34be3c580
https://doi.org/10.1109/iedm.1981.190054
https://doi.org/10.1109/iedm.1981.190054
Publikováno v:
1984 International Electron Devices Meeting.
A new epitaxial silicon p π n photodiode that operates at biases as low as 4 V has been developed. The device has a heavily doped p++isolation region between the p+substrate and the π epitaxial layer. Fast response and low leakage current result fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ab7d4bfffc85713cd2ff90f9104f68
https://doi.org/10.1109/iedm.1984.190829
https://doi.org/10.1109/iedm.1984.190829
Autor:
Adrian R. Hartman
Publikováno v:
1980 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be39c328be95e643026d73377e84d5f
https://doi.org/10.1109/iedm.1980.189953
https://doi.org/10.1109/iedm.1980.189953
Autor:
James Elwood Kohl, R.S. Scott, Yiu-Huen Wong, T.J. Riley, J.E. Berthold, Harry T. Weston, Adrian R. Hartman
Publikováno v:
1981 International Electron Devices Meeting.
The objective of this work is to develop a new solid state crosspoint switch for telecommunications circuits. The switch is fully integrated into 580V monolithic circuits with appropriate control circuitry. Integrated arrays, packaged in hermetic chi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb4a6ed12d80de28bb91009b5f84f678
https://doi.org/10.1109/iedm.1981.190055
https://doi.org/10.1109/iedm.1981.190055
Publikováno v:
1982 International Electron Devices Meeting.
High voltage (500V) crosspoint arrays have been realized in dielectric isolation technology for telecommunications applications. The crosspoint elements can be lateral bipolar devices with center gates such as the gated diode switch. To explain the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f298c7bb16acc216c5e757863cd4b31
https://doi.org/10.1109/iedm.1982.190331
https://doi.org/10.1109/iedm.1982.190331
Autor:
Adrian R. Hartman
Publikováno v:
1982 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96f0fa9726b2c441c758aa7c5f7817cd
https://doi.org/10.1109/iedm.1982.190346
https://doi.org/10.1109/iedm.1982.190346