Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Adrian Mihai Ionescu"'
Autor:
Maneesha Rupakula, Junrui Zhang, Francesco Bellando, Fabien Wildhaber, Clarissa Convertino, Heinz Schmid, Kirsten Emilie Moselund, Adrian Mihai Ionescu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 773-779 (2020)
In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic
Externí odkaz:
https://doaj.org/article/d256459bf51941fa8f91fa1036da1368
Autor:
Nicolo Oliva, Emanuele Andrea Casu, Wolfgang A. Vitale, Igor Stolichnov, Adrian Mihai Ionescu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1041-1047 (2018)
We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer
Externí odkaz:
https://doaj.org/article/59659dc256cc4ca4a17bcb8a5ffc85db
Autor:
Nicoló Oliva, Emanuele Andrea Casu, Chen Yan, Anna Krammer, Teodor Rosca, Arnaud Magrez, Igor Stolichnov, Andreas Schueler, Olivier J. F. Martin, Adrian Mihai Ionescu
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large di
Externí odkaz:
https://doaj.org/article/25553cec999049ab81a5d5611f9fe1df
Autor:
Francesco Bellando, Leandro Julian Mele, Pierpaolo Palestri, Junrui Zhang, Adrian Mihai Ionescu, Luca Selmi
Publikováno v:
Sensors, Vol 21, Iss 5, p 1779 (2021)
Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-p
Externí odkaz:
https://doaj.org/article/86be8c6ab61f47a4bd655813334d7fc0
Autor:
Nilay Dagtekin, Adrian Mihai Ionescu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 233-239 (2015)
This paper investigates the consequences of several distinctive device characteristics of tunnel FETs (TFET), namely super-linear onset, uni-directional conduction, and the dominant gate-drain capacitance, regarding the energy consumption, propagatio
Externí odkaz:
https://doaj.org/article/915ffa113190424fa8dab08cf6a51306
Autor:
Mariazel Maqueda Lopez, Emanuele Andrea Casu, Montserrat Fernandez-Bolanos, Adrian Mihai Ionescu
Publikováno v:
Proceedings, Vol 1, Iss 4, p 391 (2017)
This paper reports the design and characterization of partially-filled-gap capacitive MEMS resonators for distributed mass sensing applications. By filling the gap with HfO2, the coupling coefficient between electrode-resonator increases by ×6.67 ti
Externí odkaz:
https://doaj.org/article/0071f1340d854d30bf1ff34359804285
Autor:
Fabio Bersano, Franco De Palma, Fabian Oppliger, Floris Braakman, Ionut Radu, Pasquale Scarlino, Martino Poggio, Adrian Mihai Ionescu
In this work we explore the fabrication and experimental characterization of multi-gate FD-SOI devices that can operate both as single electron transistors (SETs) and MOSFETs. FD-SOI SET operation is achieved with electrostatically induced tunneling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a663dddad1416219e3aa918bc2d44ca5
https://infoscience.epfl.ch/record/298927
https://infoscience.epfl.ch/record/298927
This paper reports on the experimental investigation of conduction mechanisms in gated nanograins ultra-thin polysilicon nanowires (polySiNW) over a wide range of temperature: from 4K up to 400K. Some irregular Coulomb oscillations (CO) are observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::738e98f13907048c56793c0e5c1313fc
https://infoscience.epfl.ch/record/104506
https://infoscience.epfl.ch/record/104506