Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Adrian Chasin"'
Autor:
Barry O’Sullivan, Aarti Rathi, Alireza Alian, Sachin Yadav, Hao Yu, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, Bertrand Parvais, Adrian Chasin, Nadine Collaert
Publikováno v:
Micromachines, Vol 15, Iss 8, p 951 (2024)
For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to ON-state con
Externí odkaz:
https://doaj.org/article/95d5c2543378425ebf982122f14117f1
Autor:
Mischa Thesberg, Franz Schanovsky, Ying Zhao, Markus Karner, Jose Maria Gonzalez-Medina, Zlatan Stanojević, Adrian Chasin, Gerhard Rzepa
Publikováno v:
Micromachines, Vol 15, Iss 7, p 829 (2024)
Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly var
Externí odkaz:
https://doaj.org/article/1b194c5425b244549b88139d3020e5a9
Autor:
Stanislav Tyaginov, Erik Bury, Alexander Grill, Zhuoqing Yu, Alexander Makarov, An De Keersgieter, Mikhail Vexler, Michiel Vandemaele, Runsheng Wang, Alessio Spessot, Adrian Chasin, Ben Kaczer
Publikováno v:
Micromachines, Vol 14, Iss 11, p 2018 (2023)
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ioni
Externí odkaz:
https://doaj.org/article/a89ea25261ac49ac9cd9be88b909e5f2
Autor:
Stanislav Tyaginov, Barry O’Sullivan, Adrian Chasin, Yaksh Rawal, Thomas Chiarella, Camila Toledo de Carvalho Cavalcante, Yosuke Kimura, Michiel Vandemaele, Romain Ritzenthaler, Jerome Mitard, Senthil Vadakupudhu Palayam, Jason Reifsnider, Ben Kaczer
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1514 (2023)
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (
Externí odkaz:
https://doaj.org/article/159b72733fdd4cceaa85f3f66d7c71b7
Autor:
Simon Van Beek, Kaiming Cai, Kaiquan Fan, Giacomo Talmelli, Anna Trovato, Nico Jossart, Siddharth Rao, Adrian Chasin, Sebastien Couet
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7056d443235cc4d21c8730e104e445f
https://doi.org/10.1109/irps48203.2023.10117917
https://doi.org/10.1109/irps48203.2023.10117917
Autor:
Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e9e103b75b87d8398d643fd14ea1061
https://doi.org/10.1109/irps48203.2023.10118211
https://doi.org/10.1109/irps48203.2023.10118211
Autor:
Michiel J. van Setten, Hendrik F. W. Dekkers, Christopher Pashartis, Adrian Chasin, Attilio Belmonte, Romain Delhougne, Gouri S. Kar, Geoffrey Pourtois
Publikováno v:
Materials advances
With decreasing dimensions and increasing complexity, semiconductor devices are getting more difficult to fabricate. In particular the allowed deposition temperature becomes lower. Amorphous materials, which do not require annealing steps, are theref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a83b9e173e3f2fd5c35e47b3e91f845a
https://lirias.kuleuven.be/handle/20.500.12942/709343
https://lirias.kuleuven.be/handle/20.500.12942/709343
Autor:
Simon Van Beek, Kaiming Cai, Siddharth Rao, Ganesh Jayakumar, Sebastien Couet, Nico Jossart, Adrian Chasin, Gouri Sankar Kar
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::647eb643e9f27d9e77a76d427fc3e943
https://doi.org/10.1109/irps48227.2022.9764459
https://doi.org/10.1109/irps48227.2022.9764459
Autor:
Zsolt Tokei, Harold Dekkers, Michiel van Setten, Nouredine Rassoul, Attilio Belmonte, Soeren Steudel, Luka Kljucar, Manoj Nag, Jose Ignacio del Agua Borniquel, Adrian Chasin, G. L. Donadio, Gouri Sankar Kar, Jerome Mitard, Geoffrey Pourtois, Romain Delhougne, Christopher J. Wilson, Ludovic Goux
Publikováno v:
ECS Transactions. 98:205-217
In this work, IGZO device integration is reported leveraging our 300mm-fab facilities. Our objective is mainly to gain insights into the process and material elements which drive the control of the performance parameters of IGZO nFETs. To control the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::add78b137b7ea9711a3f2a0d8990b6a8
https://doi.org/10.1149/09807.0205ecst
https://doi.org/10.1149/09807.0205ecst
Autor:
Eddy Simoen, Philippe Matagne, Geert Eneman, Hans Mertens, Naoto Horiguchi, Adrian Chasin, Anabela Veloso
Publikováno v:
ECS Transactions. 97:23-33
As conventional CMOS scaling is reaching its physical limits with ever more constraining design restrictions, new device architectures are being explored as potential fin-field-effect-transistor (finFET) replacements for future technology nodes. Amon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7163f79ebba49600c039eb56ad47a90
https://doi.org/10.1149/09701.0023ecst
https://doi.org/10.1149/09701.0023ecst