Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Adrian Bojita"'
Autor:
Adina Giurgiuman, Marian Gliga, Adrian Bojita, Sergiu Andreica, Calin Munteanu, Vasile Topa, Claudia Constantinescu, Claudia Pacurar
Publikováno v:
Technologies, Vol 11, Iss 6, p 159 (2023)
The evaluation of human exposure to electric and magnetic fields represents a subject of great scientific and public interest due to the biological effects of electromagnetic fields (EMFs) on the human body and the risks caused by them to living orga
Externí odkaz:
https://doaj.org/article/9c0c67a94cea4f96af37ad16a65574ff
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 169-179 (2022)
During development of power Integrated Circuits (IC), several iterations between the design and test/ measurement steps are performed. Computer-aided engineering significantly shortens the product development process because the numerical simulations
Externí odkaz:
https://doaj.org/article/806a0a9f41954f098e6a354124bc4f61
Publikováno v:
2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME).
Publikováno v:
2021 9th International Conference on Modern Power Systems (MPS).
IC’s power devices are widely used in many applications like switched-mode power supplies, power drivers for mechanical actuators, etc., being subjected to repetitive power pulses. The Active Power Cycling (APC) influences the reliability of IC’s
Publikováno v:
2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging (SIITME).
The structure of a Double Diffused Metal-Oxide-Semiconductor (DMOS) device is complex and consists of multiple routing metallization layers interconnected through vias embedded in Silico Dioxide (SiO2). The predominant failure mechanisms that occur a
Autor:
Adrian Bojita, Cristian Boianceanu, Marius Purcar, Dan Simon, Ciprian Florea, Cosmin-Sorin Plesa
Publikováno v:
Microelectronics Reliability. 87:142-150
The metallization of double-diffused metal-oxide semiconductor (DMOS) power devices, which operate under fast thermal cycling (FTC), undergoes thermal induced plastic metal deformation (TPMD). The design of the metallization has a significant impact
Publikováno v:
2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).
The temperature and stress distribution assessment inside the high-power Double-Diffused Metal Oxide Semiconductor (DMOS) transistors which operates under repetitive thermal cycles is required in order to design reliable devices. Prediction of such p
Publikováno v:
2019 8th International Conference on Modern Power Systems (MPS).
Finding a qualitative model to study the thermo-mechanical effects inside the Metal-Oxide-Semiconductor power Integrated Circuits (MOS power IC's) is needed even from the design stage of such devices. The high number of geometry details contained by
Publikováno v:
Proceedings of the 1st International Conference on Numerical Modelling in Engineering ISBN: 9789811322723
Thermal Induced Plastic Metal Deformation (TPMD) in a double-diffused metal-oxide semiconductor (DMOS) power device is highly dependent on the design and material properties of the metallization system corresponding to the technology in which the dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c9a7b123295b7efdf6b8028c7a354d
https://doi.org/10.1007/978-981-13-2273-0_3
https://doi.org/10.1007/978-981-13-2273-0_3
Publikováno v:
2017 International Semiconductor Conference (CAS).
Numerical simulation (le. based on the Finite Element Method — FEM) is an important design method and tool that allows prediction of failure position of the Double Diffused Metal-Oxide Semiconductor (DMOS) devices and a comparative analysis of the