Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Adrian Díaz Álvarez"'
Autor:
Federico Matteini, Christophe Coinon, Gözde Tütüncüoglu, Jean-Francois Lampin, Anna Fontcuberta i Morral, Philipp Ebert, Heidi Potts, Tao Xu, Rafal E. Dunin-Borkowski, Thomas Demonchaux, Maxime Berthe, Bruno Grandidier, David Troadec, Gilles Patriarche, Adrian Díaz Álvarez, J. P. Nys
Publikováno v:
Nano Letters. 15:6440-6445
The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The gr
Autor:
Marc Veillerot, Virginie Enyedi, Chloé Thieuleux, J.P. Nys, Névine Rochat, Thibault Alphazan, Eugénie Martinez, Helen Grampeix, Maxime Berthe, François Martin, Adrian Díaz Álvarez, Bruno Grandidier, Marc Dewitte, Didier Stiévenard
Publikováno v:
ACS applied materialsinterfaces. 9(23)
Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with
Autor:
Adrian Díaz Álvarez, Tao Xu, Gözde Tütüncüoglu, Thomas Demonchaux, Jean-Philippe Nys, Maxime Berthe, Federico Matteini, Heidi A. Potts, David Troadec, Gilles Patriarche, Jean-François Lampin, Christophe Coinon, Anna Fontcuberta i Morral, Rafal E. Dunin-Borkowski, Philipp Ebert, Bruno Grandidier
Publikováno v:
Nano Letters; Oct2015, Vol. 15 Issue 10, p6440-6445, 6p
Autor:
Adrian Díaz Álvarez, Nemanja Peric, Nathali Alexandra Franchina Vergel, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Jean-Christophe Harmand, Philippe Caroff, Sébastien Plissard, Philipp Ebert, Tao Xu, Bruno Grandidier
Publikováno v:
Nanotechnology; 8/9/2019, Vol. 30 Issue 32, p1-1, 1p
Autor:
Gilles Patriarche, Philippe Caroff, J.P. Nys, Tao Xu, Adrian Díaz Álvarez, Bruno Grandidier, Philipp Ebert, Nathali Alexandra Franchina Vergel, Nemanja Peric, Jean-Christophe Harmand, Maxime Berthe, Sebastien Plissard
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2019, 30 (32), pp.324002. ⟨10.1088/1361-6528/ab1a4e⟩
Nanotechnology, 2019, 30 (32), pp.324002. ⟨10.1088/1361-6528/ab1a4e⟩
Nanotechnology, Institute of Physics, 2019, 30 (32), pp.324002. ⟨10.1088/1361-6528/ab1a4e⟩
Nanotechnology, 2019, 30 (32), pp.324002. ⟨10.1088/1361-6528/ab1a4e⟩
International audience; The surface morphology of III-V semiconductor nanowires (NWs) protected by an arsenic cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning tunneling microscopy and scanning transmission electron mi