Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Adriaan J M, Mackus"'
Autor:
Johanna (Sanne) H. Deijkers, Arthur A. deJong, Miika J. Mattinen, Jeff J. P. M. Schulpen, Marcel A. Verheijen, Hessel Sprey, Jan Willem Maes, Wilhelmus (Erwin) M. M. Kessels, Ageeth A. Bol, Adriaan J. M. Mackus
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 12, Pp n/a-n/a (2023)
Abstract Miniaturization in integrated circuits requires that the Cu diffusion barriers located in interconnects between the Cu metal line and the dielectric material should scale down. Replacing the conventional TaN with a 2D transition metal dichal
Externí odkaz:
https://doaj.org/article/cf0691abe86647728518a52e4199b94c
Publikováno v:
Journal of Catalysis. 394:476-485
Atomic layer deposition (ALD) has become a versatile tool in catalysis, allowing for precise synthesis of catalysts useful for gaining fundamental understanding of complex systems. In this work, ALD was used to perform surface-directed modification o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea086ea10cd55687ae82e0c7f2e1782c
https://doi.org/10.1016/j.jcat.2020.09.035
https://doi.org/10.1016/j.jcat.2020.09.035
Autor:
Qihao Yu, Erik Lemmen, Bas Vermulst, Adriaan J M Mackus, Wilhelmus M M (Erwin) Kessels, Korneel Wijnands
Publikováno v:
Plasma Sources Science and Technology, 31(3):035012. Institute of Physics
For atomic scale plasma processing involving precise, (an)isotropic and selective etching and deposition, it is required to precisely control the energy of the plasma ions. Tailored waveforms have been employed to bias the substrate table to accurate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07930c540cecdf15d0bdc8b2a0d01bae
https://doi.org/10.1088/1361-6595/ac4c27
https://doi.org/10.1088/1361-6595/ac4c27
Autor:
Adriaan J. M. Mackus, Wilhelmus M. M. Kessels, Marc J. M. Merkx, Jiaming Cai, Yao Jing, Rong Chen, Kun Cao
Publikováno v:
ACS Applied Materials & Interfaces, 12(47), 53519-53527. American Chemical Society
Photoluminescence perovskite nanocrystals (NCs) have shown significant potential in optoelectronic applications in view of their narrow band emission with high photoluminescence quantum yields and color tunability. The main obstacle for practical app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d013466d13107003b7ed78a61061e3b
http://www.scopus.com/inward/record.url?scp=85096668803&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85096668803&partnerID=8YFLogxK
Autor:
Wilhelmus M. M. Kessels, Dennis M. Hausmann, Adriaan J. M. Mackus, Marc J. M. Merkx, Tania E. Sandoval
Publikováno v:
Chemistry of Materials, 32(8), 3335-3345. American Chemical Society
Area-selective atomic layer deposition (ALD) is currently attracting significant interest as a solution to the current challenges in alignment that limit the development of sub-5 nm technology nodes in nanoelectronics. Development of area-selective A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1449a2f781e6d41fa5374232403eebe7
https://doi.org/10.1021/acs.chemmater.9b02992
https://doi.org/10.1021/acs.chemmater.9b02992
Autor:
Wilhelmus M. M. Kessels, Marc J. M. Merkx, Shashank Balasubramanyam, Marcel A. Verheijen, Ageeth A. Bol, Adriaan J. M. Mackus
Publikováno v:
ACS Materials Letters, 2(5), 511-518. American Chemical Society
With downscaling of device dimensions, two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) such as WS 2 are being considered as promising materials for future applications in nanoelectronics. However, at these nanoscale regime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f532911cca4d3bf02346ffd3217337d
https://doi.org/10.1021/acsmaterialslett.0c00093
https://doi.org/10.1021/acsmaterialslett.0c00093
Autor:
Karsten Arts, Satoshi Hamaguchi, Tomoko Ito, Kazuhiro Karahashi, Harm C M Knoops, Adriaan J M Mackus, Wilhelmus M M (Erwin) Kessels
Publikováno v:
Plasma Sources Science and Technology, 31(10):103002. Institute of Physics
This article discusses key elementary surface-reaction processes in state-of-the-art plasma etching and deposition relevant to nanoelectronic device fabrication and presents a concise guide to the forefront of research on plasma-enhanced atomic layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::597878adacb34c00f111dfdc476e1945
https://doi.org/10.1088/1361-6595/ac95bc
https://doi.org/10.1088/1361-6595/ac95bc
Autor:
Sumit Agarwal, Martijn F. J. Vos, Adriaan J. M. Mackus, John G. Ekerdt, Marcel A. Verheijen, Sonali N. Chopra, Wilhelmus M. M. Kessels
Publikováno v:
Chemistry of Materials, 31(11), 3878-3882. American Chemical Society
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::445b12d180de280c4cde4c6a6650c1d7
https://doi.org/10.1021/acs.chemmater.9b00193
https://doi.org/10.1021/acs.chemmater.9b00193
Autor:
Jon G. Baker, Joel R. Schneider, Adriaan J. M. Mackus, José A. Garrido Torres, Stacey F. Bent, Joseph A. Singh, Michal Bajdich
Publikováno v:
ACS Applied Energy Materials. 2:3488-3499
Nickel–iron oxyhydroxide (Ni–Fe–OOH) catalysts have been widely studied for their high activity for the oxygen evolution reaction (OER). Here we demonstrate improved OER activity through incorporat...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc60649f6f832e044b2fa0541f8cc06f
https://doi.org/10.1021/acsaem.9b00265
https://doi.org/10.1021/acsaem.9b00265
Publikováno v:
Chemistry of Materials, 31(4), 1142-1183. American Chemical Society
In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality on 3-D nanostructured substrates and control of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3726fc9bc44b7dc122107680e2436ede
http://www.scopus.com/inward/record.url?scp=85060162453&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85060162453&partnerID=8YFLogxK