Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Adrián Itzmoyotl-Toxqui"'
Autor:
José Herrera-Celis, Claudia Reyes-Betanzo, Oscar Gelvez-Lizarazo, L.G. Arriaga, Adrián Itzmoyotl-Toxqui
Publikováno v:
Journal of Materials Research and Technology, Vol 8, Iss 6, Pp 5581-5590 (2019)
Low residual stress in hydrogenated amorphous silicon-carbon (a-SixC1-x:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD) at temperature range of 100–200 °C was obtained. Profilometry, Fourier transform infrared (FTIR) spectro
Externí odkaz:
https://doaj.org/article/0229ddd705744f91aab6bb56d2400c57
Autor:
Oscar Gelvez-Lizarazo, L.G. Arriaga, Claudia Reyes-Betanzo, José Herrera-Celis, Adrián Itzmoyotl-Toxqui
Publikováno v:
Journal of Materials Research and Technology, Vol 8, Iss 6, Pp 5581-5590 (2019)
Low residual stress in hydrogenated amorphous silicon-carbon (a-SixC1-x:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD) at temperature range of 100–200 °C was obtained. Profilometry, Fourier transform infrared (FTIR) spectro
Publikováno v:
Journal of Vacuum Science & Technology B. 39:042203
This work reports an experimental study on the synthesis of hydrogenated amorphous silicon-carbon (a-SiC:H) films with improved antireflective and photo-luminescent characteristics. These films were prepared by plasma-enhanced chemical vapor depositi
Autor:
Armando Hernández-Flores, José Herrera-Celis, Claudia Reyes-Betanzo, Janet Morales-Chávez, Alvaro Zazueta-Gambino, Rafael Salinas-Domínguez, Katie Noble, Víctor Aca-Aca, Arely Culebro-Gomez, Abdu Orduña-Diaz, Stephen E. Saddow, Adrián Itzmoyotl-Toxqui, A. Torres-Jacome, Oscar Gelvez-Lizarazo
Publikováno v:
Journal of The Electrochemical Society. 164:B641-B650
Autor:
Adrián Itzmoyotl-Toxqui, Francisco Javier De la Hidalga-Wade, Carlos Zúñiga-Islas, W. Calleja-Arriaga, William W. Hernández-Montero
Publikováno v:
MRS Proceedings. 1817
The characteristics of silicon films deposited by plasma depend strongly on the reactor parameters. In our experiments, the two-level factorial design was implemented. Pressure, silane and hydrogen flows were set at high and low values for the synthe
Autor:
William W. Hernández-Montero, Laura E. Serrano-De la Rosa, Joel Molina-Reyes, Adrián Itzmoyotl-Toxqui, Carlos Zúñiga-Islas
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:011204
Silicon films with subwavelength structures were prepared on flexible polyimide by plasma deposition. Resulting films exhibited high photosensitivity and high stability. The varied parameters were pressure and silane (SiH4) flow, while power, frequen
Autor:
Ignacio E. Zaldivar-Huerta, William W. Hernández-Montero, Carlos Zúñiga-Islas, Claudia Reyes-Betanzo, A. Torres-Jacome, Adrián Itzmoyotl-Toxqui
Publikováno v:
Optical Materials Express. 2:358
We report the study of hydrogenated amorphous silicon-germanium (a-Si1-XGeX:H) films prepared by low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD) varying the composition (0 ≤ X ≤ 1). Silicon and germanium content is determined b