Zobrazeno 1 - 10
of 164
pro vyhledávání: '"Adolf Schöner"'
Autor:
Mietek Bakowski, Adolf Schöner, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, Masayuki Abe
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the
Externí odkaz:
https://doaj.org/article/dad5163e3c7c49e2bd7efe43f00288cb
Publikováno v:
Nanotechnology and Precision Engineering, Vol 3, Iss 4, Pp 235-240 (2020)
Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) is very important for their practical application. This paper studies the SiC MOSFET short-circuit characteristics with an improved test
Externí odkaz:
https://doaj.org/article/430c070a408a43e5b579807c8c3e73c7
Publikováno v:
Nanotechnology and Precision Engineering, Vol 4, Iss 1, Pp 013006-013006-4 (2021)
Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical properties and microstructural change. Under high-temperature annealing, the phase of nic
Externí odkaz:
https://doaj.org/article/8b728eab021c47a699f46e769c08866f
Autor:
Urs Gysin, Thilo Glatzel, Thomas Schmölzer, Adolf Schöner, Sergey Reshanov, Holger Bartolf, Ernst Meyer
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 2485-2497 (2015)
Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterizat
Externí odkaz:
https://doaj.org/article/cd81f80cd77e46c4a0b5ba495abadf9e
Publikováno v:
Key Engineering Materials. 946:119-124
In this paper, Shockley-Read-Hall (SRH) lifetime depth profiles in the drift layer of 10 kV SiC PiN diodes are calculated after MeV proton implantation. It is assumed that the carbon vacancy will be the domination trap for charge carrier recombinatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f27281ba28b29289fc52ec23e9bd52a
https://doi.org/10.4028/p-zo030o
https://doi.org/10.4028/p-zo030o
Autor:
Zimo Yuan, Keijo Jacobs, Mietek Bakowski, Per Ranstad, Adolf Schöner, Sergey Reshanov, Wlodek Kaplan, Hans Peter Nee, Anders Hallén
Publikováno v:
Materials Science Forum. 1062:442-446
In this paper, proton implantation with different combinations of MeV energies and doses from 2×109 to 1×1011 cm-2 is used to create defects in the drift region of 10 kV 4H-SiC PiN diodes to obtain a localized drop in the SRH lifetime. On-state and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::627edc7d3cc2c5b4adc2eaaf5f4e973d
https://doi.org/10.4028/p-5po40a
https://doi.org/10.4028/p-5po40a
Publikováno v:
Nanotechnology and Precision Engineering, Vol 3, Iss 4, Pp 235-240 (2020)
Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) is very important for their practical application. This paper studies the SiC MOSFET short-circuit characteristics with an improved test
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::468d0a66ad9c0e49c81b062207fa7e5a
http://www.sciencedirect.com/science/article/pii/S2589554020300404
http://www.sciencedirect.com/science/article/pii/S2589554020300404
Autor:
Victor V. Luchinin, Adolf Schöner, Alexey V. Afanasyev, Vladimir A. Ilyin, Sergey A. Reshanov, Aleksey I. Mikhaylov
Publikováno v:
Semiconductors. 54:122-126
A method for reducing the on-state resistance of a high-power 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p-region is proposed. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b58ba5cc1eba86a15005ba8fa6159c
https://doi.org/10.1134/s1063782620010157
https://doi.org/10.1134/s1063782620010157
Autor:
Gustav-Adolf Schoener
This treatise on religious studies traces the European tradition of astrology from its oriental beginnings to the present day. The aim is to get a view of the different mythological, philosophical and theological ideas of the cosmos (especially with
Publikováno v:
IEEE Transactions on Electron Devices. 65:4483-4489
Local lifetime reduction by proton irradiation was used to optimize the static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at fluences up to ${1} \times
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a8197ad7a6325e05695c878a4d8b8bc
https://doi.org/10.1109/ted.2018.2866763
https://doi.org/10.1109/ted.2018.2866763