Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Adibi, B."'
Publikováno v:
In Energy Procedia 2012 27:122-128
Autor:
Mandrell, L., Huang, H., Wang, Jb., Wang, Jl., Dong, Z., Lv, J., Zhu, R., Sullivan, J., Latchford, I., Adibi, B., Smith, C.
29th European Photovoltaic Solar Energy Conference and Exhibition; 881-884
Ion implantation has been running in solar cell high volume manufacturing lines for over one year producing millions of cells. It is proven to deliver higher cell efficie
Ion implantation has been running in solar cell high volume manufacturing lines for over one year producing millions of cells. It is proven to deliver higher cell efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb0098efac46d9b70a0ee19a7c2eaa1e
29th European Photovoltaic Solar Energy Conference and Exhibition; 943-945
Growth in the solar market over the coming years will drive new demands in cell manufacturing capacity at higher cell efficiency levels and lower costs/watt. At the same
Growth in the solar market over the coming years will drive new demands in cell manufacturing capacity at higher cell efficiency levels and lower costs/watt. At the same
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4078f13fcd7f41e012d797885d64a0a
28th European Photovoltaic Solar Energy Conference and Exhibition; 1870-1873
Industrial ion implantation with INTEVAC ENERGi ™ ion implant tool is demonstrated for phosphorus and boron which enables commercialization of advanced cell designs.
Industrial ion implantation with INTEVAC ENERGi ™ ion implant tool is demonstrated for phosphorus and boron which enables commercialization of advanced cell designs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f09a7a20b6c525403df79b03d37ff2b7
27th European Photovoltaic Solar Energy Conference and Exhibition; 1950-1953
Intevac ENERGiTM utilizes a continuous flux ion implantation technique and active substrate cooling to create a distinct junction profile and implant-induced amorphous
Intevac ENERGiTM utilizes a continuous flux ion implantation technique and active substrate cooling to create a distinct junction profile and implant-induced amorphous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44f939e183b0037500011308c1d85340
Autor:
Hieslmair, H., Mandrell, L., Sullivan, J., Chun, M., Zhou, L., Zhu, R., Latchford, I., Adibi, B., Li, H., Wang, J., Lv, J., Wang, A., Zhao, J.
27th European Photovoltaic Solar Energy Conference and Exhibition; 1901-1905
In order to achieve grid parity and reduce the Levelized Cost Of Electricity (LCOE), future industrial solar cell production will have to achieve higher efficiencies. I
In order to achieve grid parity and reduce the Levelized Cost Of Electricity (LCOE), future industrial solar cell production will have to achieve higher efficiencies. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c1b523fdd1f8a479a71e1876f814cfc
26th European Photovoltaic Solar Energy Conference and Exhibition; 1293-1296
In contrast to the conventional beamline ion implantation techniques, Intevac ENERGi implanter utilizes the continuous flux ion implantation technique which enhances th
In contrast to the conventional beamline ion implantation techniques, Intevac ENERGi implanter utilizes the continuous flux ion implantation technique which enhances th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f209e367b6673483f5f7267b0b23075
26th European Photovoltaic Solar Energy Conference and Exhibition; 1252-1256
Ion-implantation offers numerous advantages for solar cell manufacturing. Historically, semiconductor based ion-implantation tools did not meet the performance and cost
Ion-implantation offers numerous advantages for solar cell manufacturing. Historically, semiconductor based ion-implantation tools did not meet the performance and cost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d97f7e1ecc830114b91c2713c6712fa
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings Ion Implantation Technology - 2000 (Cat. No.00EX432); 2000, p239-242, 4p
Autor:
Al-Bayati, A., Tandon, S., Doherty, R., Murrell, A., Wagner, D., Foad, M., Adibi, B., Mickevicius, R., Menisilenko, V., Simeonov, S., Jian, A., Sing, D., Ferguson, C., Murto, R., Larson, L.
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings Ion Implantation Technology - 2000 (Cat. No.00EX432); 2000, p87-90, 4p