Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Adi Birman"'
Autor:
Ikuo Mizuno, Masafumi Tsutsui, Toshifumi Yokoyama, Tatsuya Hirata, Yoshiaki Nishi, Dmitry Veinger, Adi Birman, Assaf Lahav
Publikováno v:
Sensors, Vol 20, Iss 1, p 307 (2020)
We developed a new 2.5 μm global shutter (GS) pixel using a 65 nm process with an advanced light pipe (LP) structure. This is the world’s smallest charge domain GS pixel reported so far. This new developed pixel platform is a key enabler for ultra
Externí odkaz:
https://doaj.org/article/e367cbda5c744fe1a5034eb4afd6b655
Autor:
Tuvia Liran, Yossi Shvartzvald, Ofer Lapid, Sagi Ben-Ami, Eli Waxman, Ehud Netzer, Eran Ofek, Avishay Gal-Yam, Francesco Zappon, Merlin F. Barschke, Steven Worm, Mikhail Vasilev, Rolf Bühler, David Berge, Vladimir Koifman, Avi Miller, Anatoli Mordakhay, Gadi Lehana, Yosef Lempel, Andrei Levi, Oshrit Ben-David, Tiberiu Galambos, Adi Birman, Amos Fenigstein, Shay Alfassi, Omer Katz, Raz Reshef
Publikováno v:
Space Telescopes and Instrumentation 2022: Ultraviolet to Gamma Ray.
Autor:
Julian Schliwinski, Shrinivasrao R. Kulkarni, Francesco Zappon, Gianluca Giavitto, Dmitry Veinger, Amos Fenigstein, Benjamin Bastian-Querner, J. J. Watson, Mikhail Vasilev, Eli Waxman, Dmitri Ivanov, Avishay Gel-Yam, Ofer Lapid, Omer Katz, Joseph Tufts, Heike Prokoph, Kasey Boggs, Sagi Ben-Ami, Tuvia Liran, Rolf Bühler, Steven Worm, Juan M. Haces Crespo, Yossi Shvartzvald, Greg Bredthauer, David Berge, Arooj Asif, Nirmal Kaipachery, Shay Alfassi, Marek Kowalski, Ehud Netzer, Nicola De Simone, Eran O. Ofek, Shirly Regev, Sebastian Philipp, Daniel Küsters, Adi Birman, Merlin F. Barschke
Publikováno v:
UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XXII.
The Ultraviolet Transient Astronomical Satellite (ULTRASAT) is a scientific UV space telescope that will operate in geostationary orbit. The mission, targeted to launch in 2024, is led by the Weizmann Institute of Science (WIS) in Israel and the Isra
Autor:
David Berge, Tuvia Liran, Rolf Bühler, Adi Birman, Merlin F. Barschke, Avishay Gal-Yam, Arooj Asif, Benjamin Bastian-Querner, Nirmal Kaipachery, Nicola, Marek Kowalski, Shay Alfassi, Julian Schliwinski, Sebastian Philipp, Sagi Ben-Ami, J. J. Watson, Steven Worm, Shrinivasrao R. Kulkarni, Dmitry Veinger, Daniel Küsters, Eran O. Ofek, Shirly Regev, Mikhail Vasilev, Omer Katz, Juan M. Haces Crespo, Yossi Shvartzvald, De Simone, Francesco Zappon, Gianluca Giavitto, Dmitri Ivanov, Ehud Netzer, Ofer Lapid, Eli Waxman, Amos Fenigstein, H. Prokoph
The Ultraviolet Transient Astronomical Satellite is a scientific space mission carrying an astronomical telescope. The mission is led by the Weizmann Institute of Science in Israel and the Israel Space Agency, while the camera in the focal plane is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14fe4901b851922a4de2a13e18d81081
Autor:
Assaf Lahav, Tatsuya Hirata, Yoshiaki Nishi, Ikuo Mizuno, Masafumi Tsutsui, Toshifumi Yokoyama, Adi Birman, Dmitry Veinger
Publikováno v:
Sensors, Vol 20, Iss 1, p 307 (2020)
Sensors
Volume 20
Issue 1
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 1
Sensors (Basel, Switzerland)
We developed a new 2.5 &mu
m global shutter (GS) pixel using a 65 nm process with an advanced light pipe (LP) structure. This is the world&rsquo
s smallest charge domain GS pixel reported so far. This new developed pixel platform is a key e
m global shutter (GS) pixel using a 65 nm process with an advanced light pipe (LP) structure. This is the world&rsquo
s smallest charge domain GS pixel reported so far. This new developed pixel platform is a key e
Autor:
Amos Fenigstein, David Cohen, Gadi Lehana, Adi Birman, Guy Tennenholtz, Erez Tadmor, Giora Yahav, Assaf Lahav, Alexander Fish
Publikováno v:
IEEE Transactions on Electron Devices. 63:2892-2899
In this paper we discuss the development of an indirect time-of-flight (ToF) pixel in the 0.11- $\mu \text{m}$ CMOS image sensor technology. The pixel design is based on a pinned-photodiode structure with a novel vertical overflow drain (VOD) shutter
Publikováno v:
2014 IEEE 28th Convention of Electrical & Electronics Engineers in Israel (IEEEI).
In this study the electrical and noise characteristics of surface and buried channel N-type MOSFETs are widely investigated and compared. Various operation modes which can exist at the surface of a buried channel devices, such as accumulation, deplet
Autor:
Adi Birman, Efraim Aloni, Evgeny Pikhay, Amos Fenigstein, D. Zfira, Yakov Roizin, D. Nahmad, Vladislav Dayan
Publikováno v:
2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design.
An ultra-low power logic NVM has currents