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Publikováno v:
Information Technology and Mobile Communication ISBN: 9783642205729
In this paper, MOSFET modeling for millimeter wave integrated circuits is discussed. High frequency MOSFET is built using BSIM3v3 as intrinsic core and the parasitics due to HF are designed as extrinsic subcircuit. The proposed methodology is then us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfeb473f41f3fcf388a06fde11a69dd0
https://doi.org/10.1007/978-3-642-20573-6_50
https://doi.org/10.1007/978-3-642-20573-6_50
