Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Adem Tataroğlu"'
Publikováno v:
ACS Omega, Vol 9, Iss 29, Pp 32243-32255 (2024)
Externí odkaz:
https://doaj.org/article/3b3022d4b0524a73bbb61320ba813671
Publikováno v:
Current Applied Physics. 44:85-89
© 2022 Korean Physical SocietySchottky diodes still attract researchers as they are used in various device applications. This study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (ΦB0) values were obtained for highe
Publikováno v:
Materials Science and Engineering: B. 294:116552
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:7657-7670
The consequences of applying (Nanographite-PVP) interlayer on surface-states (N-ss), series-resistance (R-s), and polarization effects on the real and imaginary parts of the complex dielectric constant (epsilon* = epsilon '-j epsilon ''), loss-tangen
Autor:
Sema Türkay, Adem Tataroğlu
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:11418-11425
RF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal-oxide-semiconductor (MOS) capacitor. Complex dielectric permittivity (epsilon*), complex electric modulus (M*) and complex electrical conductiv
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:3451-3459
In this research, for determining the effects of the (Gr-PVP) interfacial layer, two types of diodes (Au/n-Si and Au/(Gr-PVP)/n-Si) were performed on the same n-Si wafer with the same ohmic and rectifier contacts. Graphene-doped PVP nanocomposite fil
Publikováno v:
Journal of Inorganic and Organometallic Polymers and Materials. 31:1668-1675
Cobalt ferrite (CoFe2O4) nanostructures in powder form were synthesized by an ultrasound assisted method. The crystalline structure of it was determined by XRD method. The prepared powder was mixed with an aqueous polyvinylpyrrolidone (PVP) solution
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:19846-19851
This paper presents the ionizing radiation effects on current-voltage (I-V) characteristics of Au/TiO2/n-Si metal-insulator-semiconductor (MIS) structure. The TiO(2)film as the dielectric interface layer of Au/n-Si was deposited using RF magnetron sp
Publikováno v:
Silicon. 12:2879-2883
The TiO2/SiO2 film being the dielectric layer was grown on the n-Si wafer using radio frequency (RF) magnetron sputtering. Thus, the Au/TiO2/SiO2/n-Si metal-oxide-semiconductor (MOS) capacitor was fabricated with the forming of metal contacts. The op
Researches on layered materials such as graphene have attracted lots of attention recently. It has been shown that these materials have make a junction with many semiconductor materials that behave like Schottky diodes and have rectifying characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ebdc65c91be27f4abd15ac30098e4bf
https://avesis.gazi.edu.tr/publication/details/87058c5e-e38f-48c5-999f-09d4cdb00399/oai
https://avesis.gazi.edu.tr/publication/details/87058c5e-e38f-48c5-999f-09d4cdb00399/oai