Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Adarsh Nigam"'
Autor:
Adarsh Nigam, Thirumaleshwara N. Bhat, Saravanan Rajamani, Surani Bin Dolmanan, Sudhiranjan Tripathy, Mahesh Kumar
Publikováno v:
AIP Advances, Vol 7, Iss 8, Pp 085015-085015-10 (2017)
In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD
Externí odkaz:
https://doaj.org/article/0ddd7ffe9ca44a0585132c05566d9e69
Publikováno v:
IEEE Internet of Things Journal. 9:14317-14324
We have demonstrated a highly sensitive novel platform for real-time detection of Mercury (Hg2+) ions after successfully making silver nanowires (AgNWs)-MoS2 nanocomposite and functionalizing it over ungated AlGaN/GaN high electron mobility transisto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1f65951c38200007f0f862fea767efb
https://doi.org/10.1109/jiot.2021.3071382
https://doi.org/10.1109/jiot.2021.3071382
Publikováno v:
Materials Today: Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8b6fcef3a754a8987f987f4701bc02c
https://doi.org/10.1016/j.matpr.2023.04.383
https://doi.org/10.1016/j.matpr.2023.04.383
Publikováno v:
Microactuators, Microsensors and Micromechanisms ISBN: 9783031203527
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8500aff69d4774bc9d69b22445a8bb3
https://doi.org/10.1007/978-3-031-20353-4_24
https://doi.org/10.1007/978-3-031-20353-4_24
Publikováno v:
IEEE Transactions on Electron Devices. 67:5693-5700
In this work, the MoS2 functionalized AlGaN/GaN high-electron mobility transistor (HEMT) was utilized for the first time to detect toxic mercury (Hg2+) ions under ultraviolet (UV) illumination. The AlGaN/GaN HEMT was fabricated on the sapphire substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3814879d51f9d739fa3253f6dce4d20
https://doi.org/10.1109/ted.2020.3030000
https://doi.org/10.1109/ted.2020.3030000
Autor:
Mahesh Kumar, Adarsh Nigam, Thirumaleshwara N. Bhat, Sukant K. Tripathy, Vijendra Singh Bhati, Surani Bin Dolmanan
Publikováno v:
IEEE Electron Device Letters. 40:1976-1979
We report sensitive and selective AlGaN/GaN High Electron Mobility Transistor (HEMT)-based sensor for Lead ion (Pb2+) detection. The gate region of the HEMT was functionalized by 2,5-dimercapto-1,3,4-thiadiazole (DMTD). The response of the sensor is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eda822200dd1b1f1c9218e8f1de552b0
https://doi.org/10.1109/led.2019.2947141
https://doi.org/10.1109/led.2019.2947141
Autor:
Nipun, Sharma, Adarsh, Nigam, Surani, Bin Dolmanan, Ankur, Gupta, Sudhiranjan, Tripathy, Mahesh, Kumar
Publikováno v:
Nanotechnology. 33(26)
We report significantly enhanced sensitivity of AlGaN/GaN-based high electron mobility transistor (HEMT) sensor by the targeted synthesis of IT and 2H coexisting phase MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b18b395f8cf5a0dec6bd5e6ef92ef447
https://pubmed.ncbi.nlm.nih.gov/35276685
https://pubmed.ncbi.nlm.nih.gov/35276685
Autor:
Mahesh Kumar, Sukant K. Tripathy, Thirumaleshwara N. Bhat, Adarsh Nigam, Vijendra Singh Bhati, Surani Bin Dolmanan
Publikováno v:
IEEE Sensors Journal. 19:2863-2870
This paper demonstrates a novel AlGaN/GaN high-electron mobility transistor (HEMT)-based cadmium ion (Cd2+) sensor with mercaptopropionic acid (MPA) and glutathione (GSH) functionalization. The sensing response of the sensor was analyzed by detecting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28a751fabdcbd3b78e18f49094b302b1
https://doi.org/10.1109/jsen.2019.2891511
https://doi.org/10.1109/jsen.2019.2891511
Autor:
Nipun Sharma, Adarsh Nigam, Surani Bin Dolmanan, Ankur Gupta, Sudhiranjan Tripathy, Mahesh Kumar
Publikováno v:
Nanotechnology. 33:265501
We report significantly enhanced sensitivity of AlGaN/GaN-based high electron mobility transistor (HEMT) sensor by the targeted synthesis of IT and 2H coexisting phase MoS2 and applying the gate bias voltage. The HEMT structures on Si (111) substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7ace8607226e107094ca0250d0272aa
https://doi.org/10.1088/1361-6528/ac5cff
https://doi.org/10.1088/1361-6528/ac5cff
Autor:
Mahesh Kumar, Adarsh Nigam
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2019.
In this study, a novel, highly sensitive AlGaN/ GaN high electron mobility transistor (HEMT) sensor is demonstrated for the detection of cadmium ions by the functionalization of graphitic carbon nitride (g-C3N4). The preparation of g-C3N4 was done us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9939dfb3a752f4c57c0ec91f0eff4e1a
https://doi.org/10.1063/5.0016583
https://doi.org/10.1063/5.0016583