Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Adam W. Divergilio"'
Autor:
Adam W. DiVergilio
Publikováno v:
BCICTS
This paper presents an application of the Kull-Nagel epilayer formulation for conductivity modulation to a compact model for junction diodes. This enhancement allows for improved accuracy in modeling the bias-dependence of the series resistance, a cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::486938dc3dac495f3fac5b63a01e5214
https://doi.org/10.1109/bcicts45179.2019.8972733
https://doi.org/10.1109/bcicts45179.2019.8972733
Autor:
Renata Camillo-Castillo, Bjorn Zetterlund, Pekarik John J, Vibhor Jain, Peter B. Gray, Marwan H. Khater, Adam W. Divergilio, Michael L. Kerbaugh, Q.Z. Liu, James W. Adkisson, D. L. Harame
Publikováno v:
ECS Transactions. 64:285-294
Development of SiGe HBTs in BiCMOS technology with both high f T and f MAX faces significant challenges. To increase f T, thinning the base and collector thickness is generally the first step to reduce the carrier transit times, but this increases th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69b02641f1b8b2ba7829dd48493610e9
https://doi.org/10.1149/06406.0285ecst
https://doi.org/10.1149/06406.0285ecst
Autor:
David L. Harame, John J. Pekarik, Vibhor Jain, Aaron L. Vallett, James W. Adkisson, Renata Camillo-Castillo, Bjorn Zetterlund, Qizhi Liu, Peter B. Gray, Adam W. Divergilio, Blaine J. Gross
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Peak f T of 660GHz is reported for HBT f T doubler designs in IBM 90nm SiGe BiCMOS technology 9HP. This high performance f T doubler utilizes a longer HBT for output stage compared to the input stage HBT (length ratio 2:1) resulting in improved trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d37f870a5919ae6cf15110cd35453118
https://doi.org/10.1109/bctm.2014.6981274
https://doi.org/10.1109/bctm.2014.6981274
Autor:
Scott K. Reynolds, Bodhisatwa Sadhu, Alberto Valdes-Garcia, Leonardo Vera, Adam W. Divergilio, David L. Harame, John J. Pekarik, Xiaowei Tian, N. Cahoon, John J. Ellis-Monaghan, Q.Z. Liu, Vibhor Jain, J. Lukaitis, Marwan H. Khater, Aaron L. Vallett, Peng Cheng, John R. Long, Peter B. Gray, Wooram Lee, Renata Camillo-Castillo, James W. Adkisson, Yi Zhao, Zhong-Xiang He, V. Kaushal, M. Kerbaugh, Bjorn Zetterlund, K. Newton, Blaine J. Gross
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f T and 360 GHz f MAX high performance SiGe HBTs, 135 GHz f T an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d16a05829f98760d3f419a2627c3feb
https://doi.org/10.1109/bctm.2014.6981293
https://doi.org/10.1109/bctm.2014.6981293
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a76ccabb59498cfe2cd9b343114bad
https://doi.org/10.1109/bctm.2014.6981316
https://doi.org/10.1109/bctm.2014.6981316
Autor:
Vibhor Jain, V. Kaushal, James W. Adkisson, Qizhi Liu, Peter B. Gray, David L. Harame, Renata Camillo-Castillo, Adam W. Divergilio, Peng Cheng, John J. Pekarik, Blaine J. Gross
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
High performance Schottky Barrier Diodes (SBDs) with cut-off frequency (fc) ~2.0 THz integrated into a 90nm SiGe BiCMOS technology for millimeter wave (mm-wave) applications are presented in this paper. To our knowledge, this is the highest reported
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4da3ca24e2b378baa359044d56d602d
https://doi.org/10.1109/bctm.2013.6798147
https://doi.org/10.1109/bctm.2013.6798147
Autor:
James W. Adkisson, V. Kaushal, Qizhi Liu, Renata Camillo-Castillo, Peter B. Gray, Marwan H. Khater, John J. Pekarik, David L. Harame, Adam W. Divergilio, Vibhor Jain, Peng Cheng
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Having two, or more, transistors with different values of f T and BV CEO provides flexibility to circuit designers in making tradeoffs of power and performance. The process complexity and resulting cost of fabricating these transistors on the same wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48ca6c80ee98322ba599f85f3b9fd541
https://doi.org/10.1109/bctm.2012.6352651
https://doi.org/10.1109/bctm.2012.6352651