Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Adam W, Wood"'
Autor:
Adam W. Wood, Thomas F. Kuech, Susan E. Babcock, Kangho Kim, Kamran Forghani, Luke J. Mawst, Jae-Gyoung Lee, Yingxin Guan, Honghyuk Kim
Publikováno v:
Journal of Crystal Growth. 452:276-280
GaAs 1− x Bi x /GaAs multiple quantum well heterostructures were grown by organo-metallic vapor phase epitaxy (OMVPE) at low temperatures and were subsequently in-situ annealed under an arsine (AsH 3 ) overpressure in the OMVPE reactor. Photolumine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b091344b73415006de6fc51205c3eeb
https://doi.org/10.1016/j.jcrysgro.2016.04.039
https://doi.org/10.1016/j.jcrysgro.2016.04.039
Autor:
Susan E. Babcock, Paul A. Ronsheim, Thomas F. Kuech, Yingxin Guan, Kamran Forghani, Weixin Chen, Adam W. Wood
Publikováno v:
Journal of Crystal Growth. 446:27-32
The three-dimensional distribution of Bi atoms in a GaAs 1− x Bi x /GaAs superlattice grown by metalorganic vapor phase epitaxy (MOVPE) was studied using atom probe tomography (APT). The Bi distribution in the growth direction deduced from APT agre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b57fa3ea36d0c37c0b66724644693361
https://doi.org/10.1016/j.jcrysgro.2016.04.031
https://doi.org/10.1016/j.jcrysgro.2016.04.031
Publikováno v:
Chemical Vapor Deposition. 21:166-175
This study compares the effectiveness of two Bi sources, trimethyl bismuth (TMBi) and triethyl bismuth (TEBi), in the growth of GaAs1-yBiy thin films. Through optimization of the growth conditions, GaAs1-yBiy-GaAs heterostructures with high lateral h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da7dd15dc3f1554ae03a1ade6169b3fc
https://doi.org/10.1002/cvde.201507160
https://doi.org/10.1002/cvde.201507160
Autor:
Adam W, Wood, Weixin, Chen, Honghyuk, Kim, Yingxin, Guan, K, Forghani, A, Anand, T F, Kuech, L J, Mawst, S E, Babcock
Publikováno v:
Nanotechnology. 28(21)
The effects of a 45 min anneal at 800 °C on the physical properties and microstructure of a five-period GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3d75dd1ebf52ee27c5742d31b5e7ce70
https://pubmed.ncbi.nlm.nih.gov/28471752
https://pubmed.ncbi.nlm.nih.gov/28471752
Autor:
Kamran Forghani, A Anand, Adam W. Wood, Yingxin Guan, Thomas F. Kuech, Luke J. Mawst, Susan E. Babcock
Publikováno v:
Journal of Crystal Growth. 395:38-45
Theoretical and experimental studies have confirmed that the GaAs1−yBiy semiconductor alloy system has potential for long wavelength applications and devices with improved performance over other materials emitting at similar wavelengths. The growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5207a4c533433034923a68c570a8de6d
https://doi.org/10.1016/j.jcrysgro.2014.03.014
https://doi.org/10.1016/j.jcrysgro.2014.03.014
Autor:
Ayushi Rajeev, Brian Zutter, Susan E. Babcock, Adam W. Wood, Tom Earles, D. Botez, Tae-Wan Kim, P. Buelow, Thomas F. Kuech, Jeremy Kirch, Kevin L. Schulte, Luke J. Mawst
Publikováno v:
Quantum Sensing and Nanophotonic Devices XII.
S trained -layer superlattice (SL) structures have been grown by metalorganic vapor phase epitaxy (MOVPE ) on m etamorphic buffer layers ( MBLs ) for application in intersubband -transition devices , such as quantum cascade lasers . Using the MBL as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::281905fb7d71e7da3009410e81a336f0
https://doi.org/10.1117/12.2075457
https://doi.org/10.1117/12.2075457
Publikováno v:
Nanotechnology. 27:115704
We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::739560e29615136f6af44671f77beaa2
https://doi.org/10.1088/0957-4484/27/11/115704
https://doi.org/10.1088/0957-4484/27/11/115704
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:031506
The authors have examined bismuth concentration profiles in GaAs1−xBix films grown by molecular beam epitaxy using high angle annular dark field imaging (Z-contrast imaging) in an aberration-corrected scanning transmission electron microscope in co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc3981c6ebbb3ac7b03e3acd276c5662
https://doi.org/10.1116/1.4916575
https://doi.org/10.1116/1.4916575
Publikováno v:
APL Materials, Vol 3, Iss 3, Pp 036108-036108-8 (2015)
A set of GaAs1−xBix/GaAs multilayer quantum-well structures was deposited by metal-organic vapor phase epitaxy at 390 °C and 420 °C. The precursor fluxes were introduced with the intent of growing discrete and compositionally uniform GaAs1−xBix
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8336a6419986e24de61819e3a65a8b2e
https://doi.org/10.1063/1.4915301
https://doi.org/10.1063/1.4915301
Publikováno v:
Semiconductor Science and Technology. 29:035013
Thick InxGa1-xAs metamorphic buffer layers (MBLs) grown by hydride vapor phase epitaxy (HVPE) were studied. Relationships between MBL properties and growth parameters such as grading rate, cap layer thickness, final xInAs, and deposition temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1882738b368ad6c9b638c09a661c7b63
https://doi.org/10.1088/0268-1242/29/3/035013
https://doi.org/10.1088/0268-1242/29/3/035013