Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Adam Urbanczyk"'
Autor:
AJ Adam Urbanczyk, Richard Nötzel
Publikováno v:
Current Opinion in Solid State & Materials Science, ISSN 1359-0286, 2012-04, Vol. 16, No. 2
Archivo Digital UPM
Universidad Politécnica de Madrid
Current Opinion in Solid State & Materials Science, 16(2), 59-63. Elsevier
Archivo Digital UPM
Universidad Politécnica de Madrid
Current Opinion in Solid State & Materials Science, 16(2), 59-63. Elsevier
Concepts of lateral ordering of epitaxial semiconductor quantum dots (QDs) are for the first time transferred to hybrid nanostructures for active plasmonics. We review our recent research on the self-alignment of epitaxial nanocrystals of In and Ag o
Publikováno v:
Applied Physics Letters, 102(7):073103, 073103-1/4. American Institute of Physics
We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminesce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::578709ae1e19aa6bd10e927f9bbbd257
https://research.tue.nl/nl/publications/608b9934-3291-4f69-a2e4-d8dd8427e0b1
https://research.tue.nl/nl/publications/608b9934-3291-4f69-a2e4-d8dd8427e0b1
Autor:
AJ Adam Urbanczyk, R Richard Nötzel
Publikováno v:
Journal of Applied Physics, ISSN 0021-8979, 2012-12, Vol. 112, No. 12
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::320998499155e6cc6c3d7098b761fbb6
https://oa.upm.es/16129/
https://oa.upm.es/16129/
Autor:
AJ Adam Urbanczyk, Richard Nötzel
Publikováno v:
Journal of Crystal Growth, ISSN 0022-0248, 2012-02, Vol. 341, No. 1
Archivo Digital UPM
Universidad Politécnica de Madrid
Journal of Crystal Growth, 341(1), 24-26. Elsevier
Archivo Digital UPM
Universidad Politécnica de Madrid
Journal of Crystal Growth, 341(1), 24-26. Elsevier
We report growth of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy with low density of 2 μm−2 by conversion of In nanocrystals deposited at low temperatures. The total amount of InAs used is about one monolayer, which is less than the crit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f55d87ccbda7334d6b47fc441fbec4e
https://oa.upm.es/16140/
https://oa.upm.es/16140/
Publikováno v:
Journal of Crystal Growth, 323(1), 290-292. Elsevier
We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96fb545c820ded82e84d1bd946a961a8
https://research.tue.nl/nl/publications/9a9a33c8-72cf-4c3f-8ae3-71fe903a0260
https://research.tue.nl/nl/publications/9a9a33c8-72cf-4c3f-8ae3-71fe903a0260
Publikováno v:
Applied Physics Letters, 98(24):243110, 1-3. American Institute of Physics
We demonstrate self-alignment of epitaxial Ag nanocrystals on top of low-density near-surface InAs quantum dots (QDs) grown by molecular beam epitaxy. The Ag nanocrystals support a surface plasmon resonance that can be tuned to the emission wavelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aab10923e6a451aa077780026c63a956
https://research.tue.nl/nl/publications/58720db1-5b9f-48fc-a39b-9ff37393bf4c
https://research.tue.nl/nl/publications/58720db1-5b9f-48fc-a39b-9ff37393bf4c
Publikováno v:
Applied Physics Letters, 96(11):113101, 113101-1/3. American Institute of Physics
We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the Q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::378ecd39bdaa714965a3ddfbf81bdba1
https://research.tue.nl/nl/publications/7f780d97-fe39-4e66-872c-073cb38c6c2f
https://research.tue.nl/nl/publications/7f780d97-fe39-4e66-872c-073cb38c6c2f
Publikováno v:
Optical Sensing Technology and Applications.
We studied both experimentally and numerically the spectral behavior of modal birefringence in channel waveguides inscribed in PMMA by DUV illumination. The measurements of birefringence were carried out using spectral interference method for differe
Publikováno v:
2006 International Conference on Transparent Optical Networks.
We report on experimental characterization of a microstructured optical retarder fabricated using interference lithography technique. The microstructured element is designed to be a quarter-wave plate in visible range. The measurements of retardation
Autor:
van Pj René Veldhoven, AJ Adam Urbanczyk, R Richard Nötzel, Chao-Yuan Jin, Matthias Skacel, J Jiayue Yuan, T Tian Xia
Publikováno v:
Applied Physics Letters, 102(19), 191111-1/5. American Institute of Physics
We report strongly modified optical emission of InAs/InP quantum dots (QDs) coupled to the surface plasmon resonance (SPR) of In nanoparticles grown by metal-organic vapor phase epitaxy. With increasing In deposition time, the In nanoparticle size in