Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Adam T. Caridi"'
Publikováno v:
ECS Meeting Abstracts. :2351-2351
Wide band gap (WBG) materials (i.e., Silicon Carbide (SiC)) have attracted much attention in the semiconductor arena because of their intrinsic properties (i.e. high capacitance, thermal stability, and wear resistance). In order to achieve the desire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a57b9b668204d5333e6eaa203e24733
https://doi.org/10.1149/ma2022-02642351mtgabs
https://doi.org/10.1149/ma2022-02642351mtgabs
Publikováno v:
ECS Meeting Abstracts. :2353-2353
As integrated circuits (ICs) and logic devices continue to shrink according to Moore’s Law, the demand for enhanced Chemical Mechanical Planarization (CMP) processes has increased dramatically. More specifically, an area that has gained tremendous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20507d71ab2e169e20b462819348c697
https://doi.org/10.1149/ma2022-02642353mtgabs
https://doi.org/10.1149/ma2022-02642353mtgabs
Publikováno v:
ECS Meeting Abstracts. :2281-2281
Wide band gap (WBG) materials (i.e. Silicon Carbide (SiC)) are rapidly emerging in the semiconductor arena because of their properties (i.e. high capacitance, thermal stability, and wear resistance), which allow these substrates to be used as insulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e960477bea9c2aae7e1e725809cfad7d
https://doi.org/10.1149/ma2022-01552281mtgabs
https://doi.org/10.1149/ma2022-01552281mtgabs
Autor:
Jason J. Keleher, Kiana A. Cahue, Katherine M. Wortman-Otto, Abigail N. Linhart, Adam T Caridi, Abigail L. Dudek
Publikováno v:
ECS Meeting Abstracts. :655-655
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac0914d4c62b48e97823f653865f1856
https://doi.org/10.1149/ma2021-0214655mtgabs
https://doi.org/10.1149/ma2021-0214655mtgabs