Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Adam P. Hinckley"'
Autor:
Adam P. Hinckley, Anthony J. Muscat
Publikováno v:
Solid State Phenomena. 314:54-59
Thin organic self-assembled monolayer films are used to promote adhesion and seal the pores of metal oxides as well as direct the deposition of layers on patterned surfaces. Defects occur as the self-assembled monolayer forms, and the number and type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2088302ff4d22e871c0c1078476daa4
https://doi.org/10.4028/www.scientific.net/ssp.314.54
https://doi.org/10.4028/www.scientific.net/ssp.314.54
Publikováno v:
ACS Applied Nano Materials. 3:3185-3194
Organosilane monolayers are part of many process flows in nanoelectronics and biotechnology because of their versatility. Monolayers that inhibit reactions on silicon/silicon oxide surfaces are nee...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99e4302a8a0c594c01cb3466ff202e3e
https://doi.org/10.1021/acsanm.9b02128
https://doi.org/10.1021/acsanm.9b02128
Autor:
Anthony J. Muscat, Adam P. Hinckley
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 36(15)
Organosilane monolayers containing long carbon chains are susceptible to damage when exposed to X-rays and other radiation during characterization or processing. The origin of the damage has been attributed to both energetic photons and photoelectron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b63745d8734f22ab9143c592be22d33
https://pubmed.ncbi.nlm.nih.gov/32223136
https://pubmed.ncbi.nlm.nih.gov/32223136
Autor:
Adam P. Hinckley, Anthony J. Muscat
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 36(10)
Defects occur as self-assembled monolayers form, and the number and type of defects depend on the surface preparation and deposition solvent, among other parameters. Indirect measures to detect defects using a layer property, such as the thickness or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8904f67262672b7bbde3e003de448907
https://pubmed.ncbi.nlm.nih.gov/32097555
https://pubmed.ncbi.nlm.nih.gov/32097555
Autor:
Adam P. Hinckley, Anthony J. Muscat
Publikováno v:
Solid State Phenomena. 282:232-237
Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a refe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f8a6189a250f6a9d5b7e1f05ebe791e
https://doi.org/10.4028/www.scientific.net/ssp.282.232
https://doi.org/10.4028/www.scientific.net/ssp.282.232
Publikováno v:
ECS Transactions. 80:163-170
III-V materials could be a substitute for Si and Ge in semiconductor device development because they possess higher carrier mobilities. Wet chemical cleaning and patterning of III-Vs produces soluble species that can remain in the liquid phase, preci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ac1ae9ea39998692971a10d78ef9509
https://doi.org/10.1149/08002.0163ecst
https://doi.org/10.1149/08002.0163ecst
Publikováno v:
ECS Meeting Abstracts. :1006-1006
Selective removal of native silicon dioxide (NOx) relative to the underlying Si substrate and to other films present in a device structure is important in forming low resistance electrical contacts. Xenon difluoride (XeF2) was chosen as the F-source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f556e2682d611c349412ed9552f5c53a
https://doi.org/10.1149/ma2015-02/26/1006
https://doi.org/10.1149/ma2015-02/26/1006